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The BCX52TA is a PNP medium power transistor manufactured by Diodes Incorporated, housed in an SOT-89 surface-mount package. It features a collector-emitter breakdown voltage (BVCEO) of -60 V and a continuous collector current rating of -1 A. The device supports a peak pulse collector current of -2 A and maintains a low saturation voltage of less than -500 mV at -0.5 A. Electrical characteristics include a transition frequency (fT) of 150 MHz and a DC current gain (hFE) ranging from 25 to 250 depending on the operating current.
Verify the specific part number against the manufacturer's official ordering information to ensure correct packaging and marking codes. Confirm that the component meets all required environmental compliance standards, including RoHS and lead-free specifications, before finalizing procurement decisions.
Select this component when a PNP transistor with a -60 V collector-emitter voltage rating and -1 A continuous current capacity is required. Ensure the application demands a low saturation voltage for efficient power dissipation. Verify that the SOT-89 package dimensions align with the printed circuit board layout constraints.
The BCX52TA belongs to the BCX51/52/53 series of PNP medium power transistors produced by Diodes Incorporated. This series is designed for general-purpose amplification and switching tasks. The BCX52 variant specifically offers a -60 V breakdown voltage, distinguishing it from the -45 V BCX51 and the -80 V BCX53 within the same family.
BCX51TA
The maximum collector-emitter breakdown voltage (BVCEO) for the BCX52TA is -60 V.
Yes, an automotive-compliant version is available under the separate part numbers BCX5216Q or BCX5316Q.
The transition frequency (fT) is specified as 150 MHz at a collector current of -50 mA and a collector-emitter voltage of -10 V.