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Product Detailed Parameters
- Description：TRANS PNP 80V 1A PG-SOT89
- Series：-
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR)
- Transistor Type：PNP
- Current - Collector (Ic) (Max)：1:00 AM
- Voltage - Collector Emitter Breakdown (Max)：80 V
- Vce Saturation (Max) @ Ib, Ic：500mV @ 50mA, 500mA
- Current - Collector Cutoff (Max)：100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：100 @ 150mA, 2V
- Power - Max：2 W
- Frequency - Transition：125MHz
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-243AA
- Supplier Device Package：PG-SOT89
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The BCX5316H6327XTSA1 is a PNP silicon audio frequency transistor from the BCX53 series, housed in an SOT-89-3 surface-mount package. It features a maximum collector-emitter voltage of 80 V and a continuous collector current rating of 1 A. The device supports a total power dissipation of 2 W at a case temperature up to 120 °C, with a junction temperature limit of 150 °C. Key electrical characteristics include a transition frequency (fT) of 125 MHz and a low collector-emitter saturation voltage of 0.5 V at high currents.
Feature Summary
- Designed specifically for audio frequency driver and output stages
- Provides high collector current capability for robust signal handling
- Features low collector-emitter saturation voltage for efficient operation
- Qualified according to AEC-Q101 automotive standards
Applications
- Audio frequency driver stages
- Audio frequency output stages
- Automotive electronic circuits requiring AEC-Q101 qualification
Procurement Notes
Verify the specific suffix H6327XTSA1 against official Infineon documentation to confirm packaging details and RoHS compliance status. Ensure that the component meets the required thermal resistance specifications for your application's heat dissipation needs. Cross-reference the datasheet revision date to ensure all electrical parameters are current before finalizing procurement decisions.
Selection Notes
Select this component when a PNP transistor with 80 V collector-emitter voltage and 1 A continuous current capacity is required. It is suitable for applications needing a transition frequency of 125 MHz and low saturation voltage. Consider the SOT-89-3 package size and the 2 W power dissipation limit relative to your thermal management capabilities and operating temperature range.
Part Context
This part belongs to the BCX51...BCX53... family of PNP silicon AF transistors manufactured by Infineon Technologies. The BCX53 variant specifically offers higher voltage ratings compared to the BCX51 and BCX52 models. These transistors are designed as complementary types to the NPN BCX54...BCX56 series, facilitating push-pull configurations in amplifier designs.
Replacement Considerations
Direct replacements within the same family include BCX53-10 or BCX53-16 variants, which share the SOT-89 package and general characteristics but may differ in DC current gain ranges. Verify pin configuration compatibility and ensure alternative parts meet the same AEC-Q101 qualification if used in automotive applications.
FAQ
What is the maximum collector-emitter voltage for the BCX5316H6327XTSA1?
The maximum collector-emitter voltage (VCEO) for the BCX53 series is 80 V.
Is the BCX5316H6327XTSA1 qualified for automotive applications?
Yes, the component is qualified according to the AEC-Q101 standard.
What is the transition frequency of this transistor?
The transition frequency (fT) is typically 125 MHz at IC = 50 mA and VCE = 10 V.
