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The BCX5410TA is an NPN medium power transistor manufactured by Diodes Incorporated, housed in a SOT-89 surface-mount package. It features a collector-emitter breakdown voltage (BVCEO) of 45V and supports a continuous collector current (IC) of 1A with a peak pulse current (ICM) of 2A. The device utilizes epitaxial planar die construction and offers a low saturation voltage (VCE(sat)) of less than 500mV at 0.5A. Electrical characteristics include a transition frequency (fT) of 150MHz and a DC current gain (hFE) ranging from 75 to 250 depending on operating conditions.
Verify the specific ordering suffix against official Diodes Incorporated documentation to confirm packaging details such as reel size and tape width. Ensure compliance with environmental directives including RoHS 2 and RoHS 3 requirements. Confirm that the component meets the necessary automotive or industrial standards if required for the intended application environment.
Select this component for designs requiring medium power handling in a compact SOT-89 footprint. Consider the 45V collector-emitter breakdown voltage and 1A continuous current rating when sizing thermal management solutions. Evaluate the hFE range and VCE(sat) specifications to ensure compatibility with drive circuitry and efficiency targets within the system architecture.
This part belongs to the BCX54/55/56 series of NPN medium power transistors. It serves as a complementary counterpart to the BCX51/52/53 PNP types. The series is designed for general-purpose medium power applications, offering a balance between current handling capabilities and low saturation voltage in a standard surface-mount package.
BCX54TA
The maximum collector-emitter breakdown voltage (BVCEO) is 45V.
Yes, it has a transition frequency (fT) of 150MHz at IC = 50mA and VCE = 10V.
Yes, the device is halogen and antimony free, classified as a Green Device.