SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The BCX55-16,135 is an NPN medium power transistor from the Nexperia BCX55 series. It operates with a collector-emitter voltage (VCEO) of 60 V and a continuous collector current (IC) of 1 A. The peak collector current reaches 2 A for pulses up to 1 ms. DC current gain (hFE) ranges from 100 to 250 at IC = 150 mA and VCE = 2 V. Transition frequency (fT) is typically 180 MHz at IC = 50 mA. Total power dissipation varies from 0.5 W to 1.35 W depending on PCB copper area. Junction temperature range is -55 °C to +150 °C.
Verify the specific suffix '135' against official Nexperia documentation to confirm reel quantity or tape-and-reel specifications. Confirm that the marking code 'BM' matches the intended BCX55-16 variant during incoming inspection. Ensure the ordering part number aligns with the required hFE binning for the application design.
Select this component when a 60 V NPN transistor with 1 A continuous current rating is required in a surface-mount SOT89 package. The BCX55-16 variant provides a guaranteed minimum hFE of 100 at 150 mA, distinguishing it from other gain bins in the series. Consider the exposed die pad for thermal management requirements in high-power dissipation scenarios.
This device belongs to the BCX55 series of NPN medium power transistors manufactured by Nexperia. The series includes variants with different current gain selections: BCX55, BCX55-10, and BCX55-16. All share the same SOT89 (SC-62) package and electrical ratings except for the hFE range. The PNP complement is the BCX52 series.
BCX55-10 offers lower gain selection (63-160). BCX55 provides standard gain (63-250). BCX52-16 is the PNP complement.