ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：TRANS NPN 60V 1A SOT-89-3
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- Transistor Type：NPN
- Current - Collector (Ic) (Max)：1:00 AM
- Voltage - Collector Emitter Breakdown (Max)：60 V
- Vce Saturation (Max) @ Ib, Ic：500mV @ 50mA, 500mA
- Current - Collector Cutoff (Max)：100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：63 @ 150mA, 2V
- Power - Max：1 W
- Frequency - Transition：150MHz
- Operating Temperature：-65°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-243AA
- Supplier Device Package：SOT-89-3
- Grade：-
- Qualification：-
Download product information
Overview
The BCX5510TA is an NPN medium power transistor manufactured by Diodes Incorporated, housed in a surface-mount SOT-89 package. It provides a continuous collector current of 1 A and supports peak pulse currents up to 2 A. The device features a collector-emitter breakdown voltage (BVCEO) of 60 V and a collector-base breakdown voltage (BVCBO) of 60 V. Electrical characteristics include a DC current gain (hFE) ranging from 40 to 250 at 150 mA, a transition frequency (fT) of 150 MHz, and a maximum power dissipation of 1 W under standard conditions.
Feature Summary
- Epitaxial planar die construction for reliable performance
- Low saturation voltage capability for efficient switching
- Totally lead-free and fully RoHS compliant with halogen and antimony-free green materials
Applications
- Medium power switching applications
- Amplification circuits
- Audio frequency (AF) driver stages
- Audio frequency (AF) output stages
Procurement Notes
Verify the specific part number against official manufacturer documentation to confirm electrical ratings and pinout compatibility. Ensure that the ordering suffix matches the required packaging quantity and reel specifications. Confirm compliance with relevant environmental directives such as RoHS before finalizing procurement decisions.
Selection Notes
Select this component based on the required 60 V collector-emitter voltage rating and 1 A continuous current capacity. Consider the thermal resistance values and safe operating area curves when designing heat dissipation strategies. Verify that the hFE range meets the circuit's amplification requirements and that the SOT-89 package fits the available board space.
Part Context
This device belongs to the BCX54/55/56 series of NPN medium power transistors. It serves as the 60 V variant within the lineup, complemented by the BCX54 (45 V) and BCX56 (80 V) models. Complementary PNP types are available in the BCX51/52/53 series. The BCX5510TA shares mechanical dimensions and mounting styles with other members of this family.
Replacement Considerations
Direct substitutes within the same series include the BCX54TA (45 V) and BCX56TA (80 V), provided voltage ratings align with the application needs. Other manufacturers may offer equivalent general-purpose NPN transistors in the SOT-89 package, but verification of electrical parameters and pin configurations is essential.
FAQ
What is the maximum collector-emitter voltage for the BCX5510TA?
The maximum collector-emitter breakdown voltage (BVCEO) is 60 V.
Is the BCX5510TA suitable for high-frequency applications?
It has a transition frequency (fT) of 150 MHz, making it suitable for medium-frequency amplification and switching tasks.
What is the typical DC current gain range?
The DC current gain (hFE) typically ranges from 40 to 250 when tested at a collector current of 150 mA.
