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Product Detailed Parameters
- Description：TRANS NPN 60V 1A SOT-89
- Series：-
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- Transistor Type：NPN
- Current - Collector (Ic) (Max)：1:00 AM
- Voltage - Collector Emitter Breakdown (Max)：60 V
- Vce Saturation (Max) @ Ib, Ic：500mV @ 50mA, 500mA
- Current - Collector Cutoff (Max)：100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：63 @ 150mA, 2V
- Power - Max：1.35 W
- Frequency - Transition：180MHz
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-243AA
- Supplier Device Package：SOT-89
- Grade：-
- Qualification：-
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Overview
The Nexperia BCX55,115 is an NPN medium power transistor housed in a SOT89 (SC-62) flat lead Surface-Mounted Device plastic package. It features a collector-emitter voltage of 60 V and a continuous collector current of 1 A. The device supports a peak collector current of 2 A for single pulses up to 1 ms. DC current gain ranges from 63 to 250 depending on the specific binning variant. Total power dissipation reaches 1.35 W with a sufficient collector mounting pad. The transition frequency is typically 180 MHz.
Feature Summary
- High current capability with exposed die pad for excellent thermal conductivity
- Three distinct current gain selections available within the series
- High power dissipation capacity suitable for medium power applications
Applications
- Linear voltage regulators
- Power management circuits
- Low-side switches
- MOSFET drivers
- Amplifiers
Procurement Notes
Verify the exact ordering suffix against the manufacturer's official documentation to confirm the specific current gain binning required for your design. Ensure that the procurement channel sources directly from authorized distributors to guarantee component authenticity and traceability. Confirm RoHS compliance status prior to finalizing orders.
Selection Notes
Select this component when a robust NPN transistor with high current handling and efficient heat dissipation is required. The exposed heatsink design facilitates superior thermal performance compared to standard packages. Consider the specific hFE binning requirements of your circuit to ensure consistent amplification characteristics across production batches.
Part Context
This part belongs to the BCX55 series of NPN medium power transistors manufactured by Nexperia. The series includes variants with different current gain specifications to accommodate various circuit requirements. The complementary PNP device in this family is the BCX52 series, which shares similar physical packaging and electrical stress ratings.
Replacement Considerations
BCX55-10,115
FAQ
What is the maximum peak collector current supported by the BCX55?
The device supports a peak collector current of 2 A for single pulses with a duration of 1 ms or less.
How does the package design affect thermal performance?
The SOT89 package includes an exposed die pad that provides excellent thermal and electrical conductivity, allowing for effective heat transfer to the PCB copper area.
What are the pin assignments for the BCX55 in the SOT89 package?
Pin 1 is the emitter, Pin 2 is the collector, and Pin 3 is the base.
