BCX55E6327HTSA1

Overview

BCX55E6327HTSA1 is an NPN silicon audio frequency (AF) transistor manufactured by Infineon Technologies. It features a maximum collector-emitter voltage of 60 V and a continuous collector current rating of 1 A. The device operates within a junction temperature range of -65 °C to +150 °C and dissipates up to 1000 mW of power. Packaged in SOT-89-4, it offers a transition frequency of 100 MHz and low collector-emitter saturation voltage for efficient switching.

Feature Summary

• Designed specifically for AF driver and output stages
• Supports high collector current capability
• Features low collector-emitter saturation voltage

Applications

• Audio frequency driver circuits
• Audio output stages
• General-purpose amplification

Procurement Notes

Verify the specific suffix E6327HTSA1 against official Infineon documentation to confirm package type and tape-and-reel specifications. Ensure compatibility with SOT-89-4 footprint requirements during PCB layout. Confirm RoHS compliance status through the manufacturer's latest environmental declaration before finalizing procurement.

Selection Notes

Select this component when designing audio applications requiring high current handling and low saturation voltage. Compare against complementary types like BCX51 or BCX53 if PNP configurations are needed. Verify thermal management capabilities given the 1000 mW power dissipation limit in the SOT-89-4 package.

Part Context

This part belongs to the BCX54-BCX56 series of NPN silicon AF transistors from Infineon. These devices are engineered for robust performance in audio environments, providing reliable operation for signal amplification and power driving tasks in consumer and industrial electronics.

Replacement Considerations

Complementary types include BCX51 and BCX53. Verify pinout compatibility and electrical parameters such as Vceo and Ic before substituting.