SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The BCX55H6327XTSA1 is a single NPN silicon bipolar junction transistor manufactured by Infineon Technologies. It is housed in an SOT-89-4 surface-mount package and supports a maximum collector-emitter voltage of 60 V with a continuous collector current rating of 1 A. The device features a power dissipation capacity of 2 W and a transition frequency of 100 MHz. It operates within a temperature range of -65 °C to +150 °C and holds AEC-Q101 qualification for automotive applications.
Verify the specific suffix H6327XTSA1 against official Infineon documentation to confirm the exact tape-and-reel packaging quantity and RoHS compliance status. Confirm that the component meets the required AEC-Q101 grade specifications for your target application environment before finalizing procurement orders.
Select this component when a robust NPN transistor with 1 A current handling and 60 V breakdown voltage is required in a compact SOT-89-4 footprint. Ensure the design accounts for the 2 W power dissipation limit and verify compatibility with the -65 °C to +150 °C operating temperature range for the intended deployment conditions.
This part belongs to the BCX55 series of small-signal NPN transistors from Infineon Technologies. The series is engineered for general-purpose amplification and switching roles, offering a balance of high current capability and moderate voltage ratings suitable for various consumer and industrial electronics designs.
Consult official Infineon cross-reference documents for verified substitutes. Generic equivalents may not match the specific AEC-Q101 qualification or the precise electrical characteristics defined in the datasheet.