BCX55TF

$0.36

Description：TRANS NPN 60V 1A SOT-89
Series：-

SKU:b5d37d6ab704 Category: Single Bipolar Transistors Brand: Nexperia USA Inc.

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Product introduction

Product Detailed Parameters

Description：TRANS NPN 60V 1A SOT-89
Series：-
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
Transistor Type：NPN
Current - Collector (Ic) (Max)：1:00 AM
Voltage - Collector Emitter Breakdown (Max)：60 V
Vce Saturation (Max) @ Ib, Ic：500mV @ 50mA, 500mA
Current - Collector Cutoff (Max)：100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce：63 @ 150mA, 2V
Power - Max：500 mW
Frequency - Transition：-
Operating Temperature：150°C (TJ)
Mounting Type：Surface Mount
Package / Case：TO-243AA
Supplier Device Package：SOT-89
Grade：Automotive
Qualification：AEC-Q101

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BCX55TF

Overview

The BCX55TF is an NPN silicon bipolar junction transistor manufactured by Nexperia. It operates in a SOT-89 (SC-62) surface-mount package with three leads. Key electrical ratings include a maximum collector-emitter voltage of 60 V, a maximum collector-base voltage of 60 V, and a maximum emitter-base voltage of 5 V. The device supports a continuous DC collector current of 1 A and a peak collector current of 1.5 A. Power dissipation is rated at 500 mW. The minimum DC current gain (hFE) is specified as 63 at a collector current of 150 mA and a collector-emitter voltage of 2 V. The transition frequency is 180 MHz. Operating temperatures range from -55 °C to +150 °C.

Feature Summary

High collector current capability for medium power applications
Three available current gain selections for precise circuit matching
High power dissipation capability within a compact SMD plastic package

Applications

Linear voltage regulators
MOSFET drivers
High-side switches
Power management circuits
Amplifiers

Procurement Notes

Verify the specific suffix against official Nexperia documentation to confirm exact binning or tape-and-reel specifications. Confirm RoHS compliance status through the manufacturer's latest product compliance reports. Ensure the ordering part number matches the required hFE grade for the intended application design.

Selection Notes

Select this component when a 60 V NPN transistor with 1 A current handling is required in a SOT-89 footprint. Compare against the PNP complement BCX52TF for complementary pair designs. Verify that the 500 mW power dissipation rating meets thermal requirements under expected load conditions.

Part Context

The BCX55TF belongs to the BCX55 series of NPN medium power transistors. This family includes variants such as BCX55-10 and BCX55-16, which differ primarily in current gain bins. The series is designed for general-purpose switching and amplification tasks in surface-mount assemblies.