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The BCX56-10TX is an NPN power bipolar transistor from the Nexperia BCX56T series, housed in a SOT89 (SC-62) surface-mount package. It supports a collector-emitter voltage of 80 V and a continuous collector current of 1 A, with a peak pulse current capability of 2 A. The device features a DC current gain range of 63 to 160 at VCE = 2 V and IC = 150 mA. Key electrical parameters include a collector-base breakdown voltage of 100 V, an emitter-base breakdown voltage of 5 V, and a transition frequency of 155 MHz. Total power dissipation reaches 500 mW at 25 °C ambient temperature.
Verify the specific ordering suffix against the manufacturer's official documentation to confirm the exact binning and packaging configuration. Confirm that the component meets the required AEC-Q101 qualification standards if intended for automotive use. Ensure thermal design accounts for the specified junction-to-ambient resistance values under your specific PCB mounting conditions.
Select this component when an NPN transistor with 80 V rating and 1 A current capacity is required in a compact SOT89 package. The -10T variant provides a defined hFE range of 63 to 160, distinguishing it from other gain bins in the series. Consider the thermal resistance characteristics and derating curves when designing for high ambient temperatures or limited PCB copper area.
This part belongs to the BCX56T series of NPN power transistors manufactured by Nexperia. The series includes complementary PNP devices such as the BCX53T. These components are designed for general-purpose switching and amplification tasks where moderate power handling and small form factor are critical requirements.
Direct functional substitutes within the same series include the BCX56T and BCX56-16T, which share identical pinouts and maximum ratings but differ in DC current gain specifications.