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The Central Semiconductor Corp BCX56-16 TR is an NPN silicon transistor manufactured via the epitaxial planar process and housed in a surface-mount SOT-89 package. It features a collector-emitter voltage of 80 V, continuous collector current of 1.0 A, and peak collector current of 1.5 A. The device offers a power dissipation rating of 1.3 W with a thermal resistance of 96 °C/W. Current gain (hFE) ranges from 100 to 250 at IC=150mA. Transition frequency is 130 MHz.
This component has been officially transitioned to End of Life status by Central Semiconductor Corp. No direct replacement part numbers are currently listed in official documentation. Customers should contact [email protected] for technical assistance or alternate source identification. Last purchase orders may be placed within six months of the notice date.
Select this device for surface-mount designs requiring medium-power NPN amplification. Verify that the SOT-89 footprint matches the PCB layout. Ensure the 80 V collector-emitter voltage and 1.3 W power dissipation meet circuit requirements. Confirm that the hFE range of 100 to 250 satisfies signal amplification needs.
The BCX56-16 TR belongs to the BCX54/55/56 series of NPN silicon transistors. These devices share identical physical packages and maximum ratings but differ in breakdown voltages and current gain specifications. The -16 suffix denotes a specific high-gain binning category within the series.
No public confirmed substitute part numbers are available for this discontinued component. Users must seek alternative sources through manufacturer engineering support.
The maximum collector-emitter voltage (BVCEO) is 80 V.
The DC current gain (hFE) ranges from 100 to 250 when tested at IC=150mA and VCE=2.0V.
No, the product has been classified as End of Life (EOL) by Central Semiconductor Corp.