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The BCX56-16T100 is an NPN silicon epitaxial planar transistor manufactured by ROHM Semiconductor. It features a collector current capacity of 1 A and a collector-emitter breakdown voltage of 80 V. The device operates with a transition frequency of 130 MHz and supports a maximum power dissipation of 500 mW. Designed for surface-mount applications, it utilizes the SOT-89 (TO-243AA) package. The component functions as a general-purpose amplifier or switch within electronic circuits, maintaining operational integrity across a junction temperature range up to 150°C.
Verify the specific suffix 'T100' against official ROHM documentation to confirm tape-and-reel packaging specifications. Ensure compatibility with standard SOT-89 footprint designs during PCB layout. Confirm RoHS compliance status through the manufacturer's latest environmental declaration before final procurement integration.
Select this component when an NPN transistor with 80 V breakdown and 1 A continuous current capability is required. The SOT-89 package offers a compact solution for space-constrained designs. Consider the 130 MHz frequency limit for high-speed switching requirements. Evaluate thermal constraints given the 500 mW power dissipation rating in enclosed environments.
The BCX56 series represents a line of general-purpose NPN transistors widely used in analog and digital circuitry. The BCX56-16 variant typically denotes specific gain binning or manufacturing lot characteristics defined by the producer. These devices serve as fundamental building blocks in power regulation, audio pre-amplification, and logic interface stages across various electronic hardware categories.
Direct substitutes include other NPN transistors rated for 80 V and 1 A in SOT-89 packages, such as the BCX56-16 from alternative manufacturers. Verify pinout compatibility and thermal resistance values. Ensure equivalent hFE gain ranges and transition frequencies match the original design requirements.