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The BCX5610H6327XTSA1 is an NPN silicon audio frequency transistor from the BCX54...BCX56 series, manufactured by Infineon Technologies. It features a collector-emitter voltage (VCEO) of 80 V and a maximum continuous collector current (IC) of 1 A. The device operates with a total power dissipation (Ptot) of 2 W at a case temperature up to 120°C and supports junction temperatures up to 150°C. Packaged in SOT-89, it includes an ejector pin for thermal management.
Verify the specific suffix '10' against official documentation to confirm DC current gain binning requirements. Confirm that the SOT-89 package orientation matches the target PCB footprint, noting the presence of the thermal ejector pin. Ensure compliance with RoHS standards as indicated in the datasheet specifications.
Select this component when an NPN transistor with 80 V breakdown and 1 A current capability is required for audio applications. Consider the complementary BCX53...BCX55 PNP transistors for balanced push-pull configurations. Evaluate the thermal resistance characteristics relative to the available heatsinking area on the printed circuit board.
This part belongs to the BCX54...BCX56 family of NPN silicon AF transistors. It shares the same physical package and general electrical limits as the standard BCX56 but is distinguished by specific gain grading. The family provides a cost-effective solution for discrete audio amplification tasks requiring moderate power handling.
Officially documented complementary types include BCX51, BCX53, BCX54, and BCX55. Verify exact gain binning and thermal performance before substituting with other manufacturers' equivalents.