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The BCX5616QTA is an NPN medium power Bipolar Junction Transistor (BJT) manufactured by Diodes Incorporated. It operates with a collector-emitter voltage of 80V and supports a continuous collector current of 1A, with a peak pulse current capability of 2A. The device features a low saturation voltage of less than 500mV at 0.5A and a transition frequency of 150MHz. Packaged in a SOT-89 surface-mount configuration, it is designed for automotive applications requiring specific change control. The component is AEC-Q101 qualified, PPAP capable, and manufactured in IATF16949 certified facilities.
Verify the part number suffix against official manufacturer documentation to confirm packaging specifications and reel sizes. Ensure that procurement channels are authorized to guarantee compliance with automotive quality standards and traceability requirements. Confirm that the delivered components match the specified marking codes and package dimensions provided in the datasheet.
Select this component for designs requiring high reliability in automotive environments. Consider the thermal resistance characteristics when determining heat dissipation requirements on the PCB. Evaluate the complementary PNP type for push-pull configurations. Verify that the operating temperature range meets the environmental conditions of the intended application.
This transistor belongs to the BCX5616Q series of medium power NPN transistors. It is part of a family designed to meet stringent automotive industry standards. The series includes complementary PNP types for complete circuit solutions. The manufacturing process ensures consistency and reliability for critical electronic systems.
BCX5316QTA
Yes, the BCX5616QTA is specifically designed for automotive applications requiring specific change control and is AEC-Q101 qualified.
The maximum peak pulse collector current is 2A.
The DC current gain ranges from a minimum of 75 to a maximum of 250, depending on the collector current and test conditions.