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The BCX56H6327XTSA1 is an NPN silicon bipolar junction transistor manufactured by Infineon Technologies. It is housed in a surface-mount SOT-89-3 package and holds AEC-Q101 automotive qualification. Key electrical parameters include a maximum collector-emitter voltage (VCEO) of 80 V, a collector-base voltage (VCBO) of 100 V, and a continuous collector current rating of 1 A. The device features a power dissipation capacity of 2 W and a transition frequency (fT) of 100 MHz. It operates within a temperature range of -65 °C to +150 °C.
Verify component authenticity through official Infineon channels or authorized distributors. Confirm that the specific suffix H6327XTSA1 matches the required packaging and tape-and-reel specifications. Check for end-of-life status notifications as discontinuation may impact long-term supply chain availability.
Select this component when an NPN BJT with 80 V collector-emitter voltage and 1 A current handling is required in an SOT-89-3 package. Ensure the design accommodates the 2 W power dissipation limit and verify compatibility with the -65 °C to +150 °C operating temperature range for the target application environment.
This part belongs to the BCX56 series of NPN transistors from Infineon Technologies. It shares the core electrical characteristics of the BCX56 family but is distinguished by the H6327XTSA1 suffix, which denotes specific automotive qualification, packaging format, and manufacturing traceability standards defined by the manufacturer.
Consult official Infineon documentation for verified cross-reference parts. No public substitute part numbers are confirmed in the provided source material.