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The BCX56TX is an NPN medium power transistor manufactured by Nexperia, housed in a SOT-89-3 surface-mount package. It supports a maximum collector current of 1 A and a collector-emitter voltage (VCEO) of 80 V. Key electrical parameters include a collector-base voltage (VCBO) of 100 V, an emitter-base voltage (VEBO) of 5 V, and a collector-emitter saturation voltage of 500 mV. The device features a power dissipation capability of 500 mW, a gain-bandwidth product (fT) of 155 MHz, and a DC current gain (hFE) range from 63 to 250. It operates within a temperature range of -55 °C to +150 °C.
Verify the specific suffix against official Nexperia documentation to confirm exact binning and packaging specifications. Ensure the ordering part number matches the required gain group and reel configuration. Cross-reference datasheet revisions to confirm compliance with current RoHS standards and material declarations before finalizing procurement orders.
Select this component when designing circuits requiring an NPN transistor with 80 V breakdown and 1 A continuous current handling in a compact SOT-89 footprint. The exposed pad feature necessitates proper PCB thermal relief design to maximize heat dissipation efficiency. Verify that the required hFE range aligns with the available gain bins specified in the manufacturer's selection guide.
This device belongs to the BCX56 series of NPN medium power transistors designed for surface-mount applications. It serves as a high-performance alternative to through-hole packages, offering comparable electrical characteristics in a smaller form factor. The series is engineered for reliability in industrial and automotive environments, supporting various power management and signal switching functions.
Consult official Nexperia substitution guides for verified equivalents. Generic replacements may differ in thermal resistance or gain distribution.