BCX70HE6327HTSA1

BCX70HE6327HTSA1

$0.19
  • Description:TRANS NPN 45V 0.1A PG-SOT23
  • Series:-

SKU:639dfdb6a4e0 Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS NPN 45V 0.1A PG-SOT23
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):100 mA
  • Voltage - Collector Emitter Breakdown (Max):45 V
  • Vce Saturation (Max) @ Ib, Ic:550mV @ 1.25mA, 50mA
  • Current - Collector Cutoff (Max):20nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:180 @ 2mA, 5V
  • Power - Max:330 mW
  • Frequency - Transition:250MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package:PG-SOT23
  • Grade:-
  • Qualification:-

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BCX70HE6327HTSA1

Overview

The BCX70HE6327HTSA1 is an NPN silicon small-signal bipolar junction transistor manufactured by Infineon Technologies. It is housed in a surface-mount SOT-23-3 package. The device supports a maximum collector current of 100 mA and a collector-emitter voltage of 45 V. Key electrical parameters include a transition frequency of 250 MHz, power dissipation of 330 mW, and a DC current gain range of 250 to 460. It operates within a temperature range of -65°C to +150°C.

Feature Summary

  • NPN silicon construction for audio frequency applications
  • Surface-mount SOT-23-3 packaging for compact designs
  • High DC current gain ranging from 250 to 460
  • Wide operating temperature capability up to 150°C

Applications

  • Audio frequency amplification circuits
  • General-purpose switching applications
  • Low-power signal processing stages

Procurement Notes

Verify the specific suffix HTSA1 against official Infineon documentation to confirm tape-and-reel packaging and RoHS compliance status. Confirm component availability as lifecycle data indicates potential obsolescence or end-of-life status. Cross-reference datasheet revisions to ensure parameter consistency with design requirements before finalizing procurement orders.

Selection Notes

Select this component for designs requiring high current gain in a compact SMD form factor. Ensure the circuit voltage does not exceed the 45 V collector-emitter rating. Verify thermal management capabilities given the 330 mW power dissipation limit in the SOT-23 package. Consider the 250 MHz transition frequency for appropriate bandwidth limitations in signal paths.

Part Context

This part belongs to the BCX70 series of NPN silicon transistors designed for general-purpose and audio frequency uses. It shares the SOT-23 footprint with other variants in the family but offers specific gain and voltage characteristics defined by the JE6327HTSA1 ordering code. It serves as a surface-mount alternative to through-hole equivalents in modern consumer electronics.

Replacement Considerations

BCX70JE6327HTSA1: PNP counterpart with identical pinout and similar electrical ratings; verify polarity requirements. BCX70H: Non-Automotive grade variant with identical specifications but potentially different manufacturing lot controls.

BCX70HE6327HTSA1BCX70HE6327HTSA1
$0.19
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