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The BCX70HE6327HTSA1 is an NPN silicon small-signal bipolar junction transistor manufactured by Infineon Technologies. It is housed in a surface-mount SOT-23-3 package. The device supports a maximum collector current of 100 mA and a collector-emitter voltage of 45 V. Key electrical parameters include a transition frequency of 250 MHz, power dissipation of 330 mW, and a DC current gain range of 250 to 460. It operates within a temperature range of -65°C to +150°C.
Verify the specific suffix HTSA1 against official Infineon documentation to confirm tape-and-reel packaging and RoHS compliance status. Confirm component availability as lifecycle data indicates potential obsolescence or end-of-life status. Cross-reference datasheet revisions to ensure parameter consistency with design requirements before finalizing procurement orders.
Select this component for designs requiring high current gain in a compact SMD form factor. Ensure the circuit voltage does not exceed the 45 V collector-emitter rating. Verify thermal management capabilities given the 330 mW power dissipation limit in the SOT-23 package. Consider the 250 MHz transition frequency for appropriate bandwidth limitations in signal paths.
This part belongs to the BCX70 series of NPN silicon transistors designed for general-purpose and audio frequency uses. It shares the SOT-23 footprint with other variants in the family but offers specific gain and voltage characteristics defined by the JE6327HTSA1 ordering code. It serves as a surface-mount alternative to through-hole equivalents in modern consumer electronics.
BCX70JE6327HTSA1: PNP counterpart with identical pinout and similar electrical ratings; verify polarity requirements. BCX70H: Non-Automotive grade variant with identical specifications but potentially different manufacturing lot controls.