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The BCX70KT216 is a general-purpose NPN silicon epitaxial planar transistor manufactured by ROHM Semiconductor. It is housed in the SST3 (SOT-23) surface-mount package, measuring 2.4x2.9 mm with a thickness of 1.2 mm. The device features a collector-emitter voltage (Vceo) of 45 V and a continuous collector current (Ic) of 0.2 A. Maximum power dissipation is rated at 0.2 W. The DC current gain (hFE) ranges from 140 to 630. It operates within a storage temperature range of -55°C to 150°C.
Verify that the ordering part number matches the specific suffix required for tape-and-reel packaging quantities. Confirm supply status as the component may be designated as not recommended for new designs. Ensure compliance with RoHS directives and verify the package code corresponds to the SST3 form factor before finalizing procurement orders.
Select this component when a small surface-mount NPN transistor with moderate voltage ratings is required. The 45 V collector-emitter voltage and 0.2 A current capacity define its operational limits. Consider the hFE range of 140 to 630 for biasing requirements. The SOT-23 package dictates board space constraints and thermal management strategies for low-power dissipation scenarios.
The BCX70K series represents a line of general-purpose amplification transistors designed for cost-effective integration into consumer and industrial electronics. Manufactured by ROHM Semiconductor, these devices utilize standard silicon planar processes. The KT216 suffix indicates a specific taping configuration for high-volume surface-mount production lines.
The BC847C is listed as a similar level replacement with the same pinout and package. Verify that the BC847C's hFE range of 420 to 800 aligns with circuit design requirements, as it differs from the BCX70K's specified gain range.