BCX71JE6433HTMA1

Overview

BCX71JE6433HTMA1 is a single-element PNP silicon small signal bipolar junction transistor manufactured by Infineon Technologies. It features a maximum collector current of 100 mA and a collector-emitter breakdown voltage of 45 V. The device operates within a temperature range of -65 °C to +150 °C, with a maximum power dissipation of 330 mW. It utilizes an SOT-23 surface-mount package and offers a minimum DC current gain (hFE) of 250.

Feature Summary

• PNP silicon construction for small signal amplification
• High DC current gain capability
• SOT-23 surface-mount packaging

Applications

• Small signal amplification circuits
• Switching applications
• General-purpose analog electronics

Procurement Notes

Verify the specific suffix E6433 against official Infineon documentation to confirm tape-and-reel specifications and RoHS compliance status. Confirm availability as distribution channels may list obsolete or end-of-life variants. Ensure the ordering part number matches the exact electrical characteristics required for the design.

Selection Notes

Select this component for designs requiring a PNP transistor with moderate current handling and high gain in a compact SOT-23 footprint. Verify that the 45 V collector-emitter voltage rating exceeds the maximum circuit operating voltage. Consider the 330 mW power dissipation limit when designing thermal management solutions for the application.

Part Context

The BCX71J belongs to Infineon's BCX71 series of general-purpose PNP transistors. These devices are designed for low-voltage, low-power applications. The 'J' suffix typically denotes a specific binning category for current gain (hFE), ensuring consistent performance across production batches compared to standard unsorted variants.

Replacement Considerations

Consult official Infineon substitution guides for verified equivalents. Generic replacements must match the SOT-23 package, PNP polarity, 100 mA current rating, and 45 V voltage rating.