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Product Detailed Parameters
- Description：32V 100MA 340MW TH TRANSISTOR-SM
- Series：BCY58
- Mfr：Central Semiconductor Corp
- Package：Box
- Transistor Type：NPN
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：32 V
- Vce Saturation (Max) @ Ib, Ic：700mV @ 2.5mA, 100mA
- Current - Collector Cutoff (Max)：10nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：120 @ 2mA, 5V
- Power - Max：340 mW
- Frequency - Transition：150MHz
- Operating Temperature：-65°C ~ 200°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-206AA, TO-18-3 Metal Can
- Supplier Device Package：TO-18
- Grade：-
- Qualification：-
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Overview
The BCY58-VII TIN/LEAD is a silicon NPN single bipolar junction transistor (BJT) manufactured by Central Semiconductor Corp. It utilizes a TO-18-3 metal can package for through-hole mounting. Key electrical specifications include a collector-emitter voltage of 32 V, a collector-base voltage of 32 V, and an emitter-base voltage of 7 V. The device supports a maximum DC collector current of 100 mA with a power dissipation rating of 340 mW. It features a transition frequency of 150 MHz and operates within a temperature range of -65°C to +200°C.
Feature Summary
- Utilizes a hermetically sealed TO-18-3 metal can package designed for high-reliability through-hole applications.
- Constructed from silicon material to ensure stable performance across extreme operating temperatures up to 200°C.
- Provides single NPN configuration suitable for general-purpose switching and amplification tasks.
Applications
- High-temperature electronic circuit design
- Military and aerospace component integration
- General-purpose signal amplification
Procurement Notes
Verify the specific suffix designation during procurement, as the provided data references the PBFREE variant while the query specifies TIN/LEAD. Confirm RoHS compliance status and lead times directly with the manufacturer or authorized distributors, as availability may vary between plating options. Ensure the selected variant matches the required environmental and regulatory standards for the intended application.
Selection Notes
Select this component when a robust metal-can BJT is required for environments exceeding standard plastic package temperature limits. The TO-18-3 form factor offers superior thermal stability compared to smaller surface-mount alternatives. Consider the 32 V voltage rating and 100 mA current capacity against circuit requirements to ensure adequate headroom for reliable operation under varying load conditions.
Part Context
This part belongs to the BCY58 series of NPN transistors produced by Central Semiconductor Corp. The series includes variants with different termination finishes, such as tin/lead and lead-free options. These components are categorized as discrete semiconductors designed for through-hole installation in industrial and specialized electronic systems requiring durable packaging.
Replacement Considerations
Publicly confirmed substitute part numbers for this specific model were not identified in the available documentation. Verify pinout compatibility and electrical parameters before considering alternative manufacturers' equivalents.
