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Product Detailed Parameters
- Description：32V 100MA 340MW TH TRANSISTOR-SM
- Series：BCY58
- Mfr：Central Semiconductor Corp
- Package：Box
- Transistor Type：NPN
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：32 V
- Vce Saturation (Max) @ Ib, Ic：700mV @ 2.5mA, 100mA
- Current - Collector Cutoff (Max)：10nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：380 @ 2mA, 5V
- Power - Max：340 mW
- Frequency - Transition：150MHz
- Operating Temperature：-65°C ~ 200°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-206AA, TO-18-3 Metal Can
- Supplier Device Package：TO-18
- Grade：-
- Qualification：-
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Overview
The BCY58-X is an NPN silicon small-signal bipolar junction transistor manufactured by Central Semiconductor Corp. It utilizes a TO-18-3 metal can package designed for through-hole mounting. The device supports a maximum collector-emitter voltage of 32 V and a collector-base voltage of 32 V, with an emitter-base voltage rating of 7 V. Continuous collector current is rated at 100 mA, while peak DC collector current reaches 200 mA. Power dissipation is specified at 340 mW. The component operates within a temperature range from -65 °C to +200 °C.
Feature Summary
- Utilizes silicon planar technology for stable electrical performance
- Features a hermetically sealed metal can construction for environmental protection
- Designed for high current gain applications in audio frequency circuits
Applications
- Audio frequency amplification stages
- General-purpose switching circuits
- Low-noise signal processing
Procurement Notes
Verify the specific suffix designation against official manufacturer documentation to confirm pinout orientation and marking codes. Ensure that the tin/lead termination material meets project requirements regarding compliance standards. Confirm availability status directly with authorized distributors as supply levels may fluctuate. Validate datasheet revisions prior to final design implementation.
Selection Notes
Select this component when a robust metal can package is required for high-temperature environments up to 200 °C. The 32 V voltage rating suits low-voltage logic or analog interfaces. Consider the 340 mW power dissipation limit for thermal management in enclosed spaces. Verify compatibility with existing PCB footprints for the TO-18-3 configuration.
Part Context
This part belongs to the BCY58 series of NPN silicon transistors produced by Central Semiconductor. The series includes variants such as BCY58-VIII and BCY58-IX, which share similar electrical characteristics but may differ in mechanical markings or specific binning criteria. These devices are positioned as general-purpose discrete semiconductors suitable for industrial and commercial electronics.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided source data. Cross-referencing with generic equivalents requires independent verification of absolute maximum ratings and pin configurations.
