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The BD135-6-BP is a single NPN silicon power transistor manufactured by Micro Commercial Components. It features a collector-emitter voltage rating of 45 Vdc and supports a continuous collector current of 1.5 Adc. The device operates within a temperature range of -55 to +150 °C. Electrical characteristics include a minimum DC current gain (hFE) of 40 at 150 mA, with the '-6' suffix indicating a specific hFE ranking of 40 to 100. It utilizes a TO-92 through-hole package.
Verify authenticity by purchasing directly from Micro Commercial Components or authorized distributors. Counterfeit parts pose significant risks; unauthorized sources lack traceability and warranty coverage. Confirm the '-BP' suffix indicates bulk packaging and RoHS compliance. Ensure the '-6' suffix matches the required DC current gain classification for your specific circuit design needs.
Select this component when a 45 V NPN power transistor is required for audio or driver applications. The BD135-6 variant specifically targets designs needing an hFE range of 40 to 100. For higher voltage requirements, consider the BD137-6 (60 V) or BD139-6 (80 V). Ensure thermal management accounts for the 1.25 W dissipation limit at ambient temperatures above 25 °C.
This part belongs to the BD135/BD137/BD139 family of medium-power NPN transistors designed for complementary use with BD136/BD138/BD140 PNP types. The series is optimized for linear and switching applications in consumer electronics and audio equipment. The BD135-6 represents the lowest voltage tier within this specific product line.
Direct functional substitutes within the same voltage and current class include the BD135-10 and BD135-16, which differ only in DC current gain rankings. Cross-manufacturer equivalents such as the MJE3055 may be considered if pinout and thermal characteristics align, though electrical parameters should be verified against the datasheet.
The '-6' suffix specifies the DC current gain (hFE) ranking, which ranges from 40 to 100 under test conditions of IC=150mA and VCE=2V.
The datasheet defines it for general linear and switching applications but does not specify high-frequency transition parameters like fT. It is primarily intended for audio and driver frequencies.
It is designed to complement the BD136 PNP transistor in quasi-complementary or complementary push-pull amplifier circuits.