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Product Detailed Parameters
- Description：TRANS NPN 45V 1.5A SOT-32-3
- Series：-
- Mfr：STMicroelectronics
- Package：Tube
- Transistor Type：NPN
- Current - Collector (Ic) (Max)：1.5 A
- Voltage - Collector Emitter Breakdown (Max)：45 V
- Vce Saturation (Max) @ Ib, Ic：500mV @ 50mA, 500mA
- Current - Collector Cutoff (Max)：100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：40 @ 150mA, 2V
- Power - Max：1.25 W
- Frequency - Transition：-
- Operating Temperature：150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-225AA, TO-126-3
- Supplier Device Package：SOT-32-3
- Grade：-
- Qualification：-
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Overview
The BD135 is an NPN silicon epitaxial planar transistor manufactured by STMicroelectronics, housed in a SOT-32 plastic package. It features a maximum collector-emitter voltage (VCEO) of 45 V and a continuous collector current (IC) rating of 1.5 A. The device supports a peak collector current of 3 A and has a total power dissipation of 1.25 W at ambient temperature. Key electrical characteristics include a DC current gain (hFE) ranging from 25 to 250, with pre-selected gain groups available for specific part variants.
Feature Summary
- Designed for audio amplifiers and drivers utilizing complementary or quasi-complementary circuits
- Epitaxial planar construction mounted in a SOT-32 plastic package
- Products are pre-selected in DC current gain
Applications
- Audio amplifiers
- Drivers utilizing complementary circuits
- Drivers utilizing quasi-complementary circuits
Procurement Notes
Verify the exact ordering code against the datasheet Table 1, as suffixes like -16 denote specific hFE groupings rather than functional changes. Confirm that the SOT-32 tube packaging matches your assembly requirements. Ensure compliance with ECOPACK lead-free specifications if environmental standards apply to your production line.
Selection Notes
Select the BD135 when a low-voltage NPN transistor is required for general-purpose applications. Consider the BD139 variant if a higher collector-emitter voltage rating of 80 V is necessary. Verify that the thermal resistance values align with your heat dissipation strategy, particularly regarding junction-to-case performance.
Part Context
The BD135 belongs to a family of complementary low-voltage transistors produced by STMicroelectronics. It serves as the NPN counterpart to the BD136 PNP type. This series is engineered for use in audio and driver circuits where complementary configurations are standard, offering matched performance characteristics within the broader product line.
Replacement Considerations
BD139
FAQ
What is the difference between the BD135 and BD139?
The primary difference is the voltage rating; the BD135 has a VCEO of 45 V, while the BD139 supports up to 80 V. Both share similar current and power ratings.
Are these transistors suitable for automotive applications?
No. ST explicitly states that products not specified as 'Automotive Grade' may only be used in automotive applications at the user's own risk.
What does the '-16' suffix indicate in the ordering code?
The suffix indicates a specific pre-selected DC current gain (hFE) grouping. For example, BD135-16 corresponds to a specific gain range defined in the electrical characteristics table.
