BD13510S

$0.10

Description：TRANS NPN 45V 1.5A TO-126-3
Series：-

SKU:d558f0ca9e5e Category: Single Bipolar Transistors Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：TRANS NPN 45V 1.5A TO-126-3
Series：-
Mfr：onsemi
Package：Bulk
Transistor Type：NPN
Current - Collector (Ic) (Max)：1.5 A
Voltage - Collector Emitter Breakdown (Max)：45 V
Vce Saturation (Max) @ Ib, Ic：500mV @ 50mA, 500mA
Current - Collector Cutoff (Max)：100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce：63 @ 150mA, 2V
Power - Max：1.25 W
Frequency - Transition：-
Operating Temperature：150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-225AA, TO-126-3
Supplier Device Package：TO-126-3
Grade：-
Qualification：-

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BD13510S

Overview

The BD13510S is an NPN epitaxial silicon transistor from the BD135 series, housed in a TO-126 package. It features a collector-emitter voltage (VCEO) of 45 V and a maximum DC collector current of 1.5 A. The device offers a minimum DC current gain (hFE) of 40 at IC = 150 mA, with a collector-emitter saturation voltage of 0.5 V at IC = 500 mA. Power dissipation reaches 12.5 W at case temperature of 25°C. It operates up to a junction temperature of 150°C.

Feature Summary

Epitaxial planar construction for reliable medium-power switching and linear applications
Complementary pairing available with PNP types BD136, BD138, and BD140
High DC current gain classification for efficient driver circuit integration

Applications

Audio amplifiers utilizing complementary or quasi-complementary circuits
General-purpose linear and switching applications
Driver stages requiring medium power handling

Procurement Notes

Verify the specific suffix '10S' against manufacturer documentation to confirm tape-and-reel packaging versus bulk supply. Confirm RoHS compliance status through official datasheets or component markings. Ensure the sourcing channel provides valid traceability for the Fairchild Semiconductor origin. Check for any obsolescence notices as the product may be discontinued by the original manufacturer.

Selection Notes

Select this component when a 45 V NPN transistor with 1.5 A continuous current capability is required. The BD135 variant specifically suits designs needing lower voltage ratings compared to the BD137 (60 V) or BD139 (80 V). Consider the TO-126 package for through-hole mounting requirements. Evaluate thermal management needs based on the 12.5 W case dissipation rating.

Part Context

This part belongs to the BD135/137/139 family of NPN epitaxial silicon transistors originally manufactured by Fairchild Semiconductor. These devices are designed for medium-power applications and serve as complements to the BD136, BD138, and BD140 PNP transistors. The BD13510S designation indicates the BD135 electrical specification within the TO-126 package format.