BD13516S

Overview

The BD13516S is an NPN epitaxial silicon transistor from the BD135 series, housed in a TO-126 package. It features a collector-emitter voltage (VCEO) of 45 V and a continuous collector current of 1.5 A. The device offers a DC current gain (hFE) range of 100 to 250 for the '16' classification. Key electrical parameters include a collector-base voltage of 45 V, emitter-base voltage of 5 V, and collector-emitter saturation voltage of 0.5 V at 500 mA. Power dissipation reaches 12.5 W at case temperature of 25°C.

Feature Summary

• Epitaxial planar construction designed for linear and switching applications
• Pre-selected DC current gain categories for consistent performance
• Complementary pairing available with PNP types BD136, BD138, and BD140

Applications

• Audio amplifiers
• Driver circuits utilizing complementary configurations
• Quasi-complementary circuit designs

Procurement Notes

Verify component authenticity against official datasheets due to potential legacy status. Confirm specific hFE binning matches design requirements. Check RoHS compliance documentation for environmental standards. Validate package dimensions against PCB footprint specifications before integration.

Selection Notes

Select based on required hFE gain band and thermal management needs. Ensure operating voltage remains below the 45 V limit. Consider power derating curves for ambient temperature conditions. Verify compatibility with complementary PNP transistors if push-pull topologies are utilized.

Part Context

Part of the BD135/137/139 family of medium-power NPN transistors. Designed for general-purpose audio and driver applications. Manufactured using epitaxial silicon technology. Available in through-hole TO-126 packaging for robust mounting.

Replacement Considerations

BD135 serves as the base model within the same voltage and current rating family.