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Product Detailed Parameters
- Description：TRANS NPN 45V 1.5A TO-126-3
- Series：-
- Mfr：onsemi
- Package：Tube
- Transistor Type：NPN
- Current - Collector (Ic) (Max)：1.5 A
- Voltage - Collector Emitter Breakdown (Max)：45 V
- Vce Saturation (Max) @ Ib, Ic：500mV @ 50mA, 500mA
- Current - Collector Cutoff (Max)：100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：100 @ 150mA, 2V
- Power - Max：1.25 W
- Frequency - Transition：-
- Operating Temperature：150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-225AA, TO-126-3
- Supplier Device Package：TO-126-3
- Grade：-
- Qualification：-
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Overview
The BD13516STU is an NPN silicon epitaxial planar power transistor manufactured by onsemi. It is housed in the SOT-32 plastic package and designed for audio amplifiers and drivers utilizing complementary or quasi-complementary circuits. The device features a maximum collector current of 1.5 A and a collector-emitter voltage rating of 45 V. Products are pre-selected in DC current gain to ensure consistent performance characteristics across units.
Feature Summary
- Epitaxial planar construction for robust power handling
- Pre-selected DC current gain for circuit consistency
- Designed for complementary and quasi-complementary driver applications
Applications
- Audio amplifier circuits
- Driver stages in complementary configurations
- Quasi-complementary output stages
Procurement Notes
Verify the manufacturer marking matches onsemi specifications. Confirm the SOT-32 package type and pinout alignment with design schematics. Ensure the part number suffix corresponds to the required tape-and-reel packaging format if applicable. Cross-reference the datasheet revision date to confirm parameter validity against the target application requirements.
Selection Notes
Select this component when designing audio output stages requiring an NPN transistor with 1.5 A continuous current capability. The pre-selected gain simplifies biasing in complementary pairs. Verify thermal management requirements for the SOT-32 package under expected load conditions. Ensure the 45 V breakdown voltage exceeds the peak supply voltages in the target circuit topology.
Part Context
This part belongs to the BD135/BD139 series of NPN power transistors. It is paired with complementary PNP types, specifically the BD136 and BD140, to form complete push-pull amplifier stages. The series is characterized by high current gain and reliability for general-purpose power switching and linear amplification tasks.
Replacement Considerations
Direct substitutes include the BD135 and BD139 from compatible manufacturers. Verify pin compatibility and electrical ratings match the original design constraints before substitution.
