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The BD136-16 is a PNP silicon epitaxial planar transistor manufactured by STMicroelectronics. It operates within the SOT-32 plastic package and serves as the complementary counterpart to the NPN BD139 device. The component supports a maximum collector current of 1.5 A and withstands a collector-emitter voltage of -45 V. DC current gain (hFE) is pre-selected into specific groups, with the BD136-16 variant covering a range of 100 to 250 at an Ic of -150 mA and Vce of -2 V.
Verify the specific ordering code BD136-16 against the manufacturer's official documentation to confirm the exact hFE grouping and packaging specifications. Ensure that the selected component meets the required thermal resistance and absolute maximum ratings for the intended operating environment before finalizing procurement decisions.
Select this component when designing complementary pairs with the BD139 NPN transistor for low-voltage audio applications. Consider the specific hFE group requirements for the circuit design, as the BD136-16 offers a defined gain range. Evaluate the thermal dissipation capabilities relative to the mounting conditions to ensure reliable operation within the specified temperature limits.
This part belongs to the BD135-BD136-BD139-BD140 family of complementary low-voltage transistors. These devices are engineered for general-purpose use in audio and driver stages. The BD136-16 specifically denotes the PNP type with a designated current gain classification, paired electrically with the BD139-16 NPN device.
BD136
The BD136-16 has a pre-selected DC current gain (hFE) range of 100 to 250, measured at Ic = -150 mA and Vce = -2 V.
The maximum collector-emitter voltage (VCEO) for the BD136-16 is -45 V.