BD136-16

BD136-16

$0.67
  • Description:TRANS PNP 45V 1.5A SOT-32
  • Series:-

SKU:7069c9384041 Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS PNP 45V 1.5A SOT-32
  • Series:-
  • Mfr:STMicroelectronics
  • Package:Tube
  • Transistor Type:PNP
  • Current - Collector (Ic) (Max):1.5 A
  • Voltage - Collector Emitter Breakdown (Max):45 V
  • Vce Saturation (Max) @ Ib, Ic:500mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:40 @ 150mA, 2V
  • Power - Max:1.25 W
  • Frequency - Transition:-
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-225AA, TO-126-3
  • Supplier Device Package:SOT-32
  • Grade:-
  • Qualification:-

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BD136-16

Overview

The BD136-16 is a PNP silicon epitaxial planar transistor manufactured by STMicroelectronics. It operates within the SOT-32 plastic package and serves as the complementary counterpart to the NPN BD139 device. The component supports a maximum collector current of 1.5 A and withstands a collector-emitter voltage of -45 V. DC current gain (hFE) is pre-selected into specific groups, with the BD136-16 variant covering a range of 100 to 250 at an Ic of -150 mA and Vce of -2 V.

Feature Summary

  • Designed for audio amplifiers and drivers utilizing complementary or quasi-complementary circuits
  • Pre-selected in DC current gain for consistent performance across applications

Applications

  • Audio amplifiers
  • Complementary circuit drivers
  • Quasi-complementary circuit drivers

Procurement Notes

Verify the specific ordering code BD136-16 against the manufacturer's official documentation to confirm the exact hFE grouping and packaging specifications. Ensure that the selected component meets the required thermal resistance and absolute maximum ratings for the intended operating environment before finalizing procurement decisions.

Selection Notes

Select this component when designing complementary pairs with the BD139 NPN transistor for low-voltage audio applications. Consider the specific hFE group requirements for the circuit design, as the BD136-16 offers a defined gain range. Evaluate the thermal dissipation capabilities relative to the mounting conditions to ensure reliable operation within the specified temperature limits.

Part Context

This part belongs to the BD135-BD136-BD139-BD140 family of complementary low-voltage transistors. These devices are engineered for general-purpose use in audio and driver stages. The BD136-16 specifically denotes the PNP type with a designated current gain classification, paired electrically with the BD139-16 NPN device.

Replacement Considerations

BD136

FAQ

What is the DC current gain range for the BD136-16?

The BD136-16 has a pre-selected DC current gain (hFE) range of 100 to 250, measured at Ic = -150 mA and Vce = -2 V.

What is the maximum collector-emitter voltage for this transistor?

The maximum collector-emitter voltage (VCEO) for the BD136-16 is -45 V.

BD136-16BD136-16
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