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The BD13610STU is a PNP epitaxial silicon transistor from the BD136 series, housed in a TO-126 package. It features a collector-emitter voltage of -45 V and a continuous collector current rating of -1.5 A. The device supports a maximum collector dissipation of 12.5 W at 25°C case temperature. DC current gain (hFE) is classified into three bins: hFE1 (25–250), hFE2 (25–250), and hFE3 (40–250). Key electrical limits include a collector-base voltage of -45 V and an emitter-base voltage of -5 V.
Verify the specific hFE binning requirement against the datasheet classification table. Confirm that the TO-126 package dimensions match the target PCB layout. Ensure thermal management strategies account for the 12.5 W dissipation limit at case temperature versus the lower limit at ambient temperature. Check for RoHS compliance status if required by the assembly process.
Select this component when a PNP medium-power transistor is needed to complement NPN devices like the BD135 or BD139. Consider the -45 V breakdown voltage and -1.5 A current capacity for load requirements. Evaluate the thermal resistance characteristics if operating near the 12.5 W limit. Verify that the available hFE bins meet the circuit's gain stability needs without requiring extensive sorting.
This part belongs to the BD136/138/140 family of PNP transistors manufactured originally by Fairchild Semiconductor. The BD136 variant specifically offers a -45 V rating, distinguishing it from the higher-voltage BD138 (-60 V) and BD140 (-80 V) counterparts. These components are widely used in audio output stages and general-purpose power switching roles within consumer electronics.
Direct substitutes include the BD136 from other manufacturers adhering to the same TO-126 footprint and electrical specifications. Complementary NPN replacements for the pair include the BD135 or BD139.