BD13610STU

BD13610STU

$1.07
  • Description:TRANS PNP 45V 1.5A TO-126-3
  • Series:-

SKU:55c3d4dd8c6b Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS PNP 45V 1.5A TO-126-3
  • Series:-
  • Mfr:onsemi
  • Package:Tube
  • Transistor Type:PNP
  • Current - Collector (Ic) (Max):1.5 A
  • Voltage - Collector Emitter Breakdown (Max):45 V
  • Vce Saturation (Max) @ Ib, Ic:500mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:63 @ 150mA, 2V
  • Power - Max:1.25 W
  • Frequency - Transition:-
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-225AA, TO-126-3
  • Supplier Device Package:TO-126-3
  • Grade:-
  • Qualification:-

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BD13610STU

Overview

The BD13610STU is a PNP epitaxial silicon transistor from the BD136 series, housed in a TO-126 package. It features a collector-emitter voltage of -45 V and a continuous collector current rating of -1.5 A. The device supports a maximum collector dissipation of 12.5 W at 25°C case temperature. DC current gain (hFE) is classified into three bins: hFE1 (25–250), hFE2 (25–250), and hFE3 (40–250). Key electrical limits include a collector-base voltage of -45 V and an emitter-base voltage of -5 V.

Feature Summary

  • Epitaxial planar construction designed for linear and switching applications
  • Complementary pairing with NPN types such as BD135 and BD139
  • Pre-selected DC current gain classifications for consistent performance

Applications

  • Audio amplifiers utilizing complementary circuits
  • Drivers utilizing quasi-complementary circuits
  • Medium power linear switching applications

Procurement Notes

Verify the specific hFE binning requirement against the datasheet classification table. Confirm that the TO-126 package dimensions match the target PCB layout. Ensure thermal management strategies account for the 12.5 W dissipation limit at case temperature versus the lower limit at ambient temperature. Check for RoHS compliance status if required by the assembly process.

Selection Notes

Select this component when a PNP medium-power transistor is needed to complement NPN devices like the BD135 or BD139. Consider the -45 V breakdown voltage and -1.5 A current capacity for load requirements. Evaluate the thermal resistance characteristics if operating near the 12.5 W limit. Verify that the available hFE bins meet the circuit's gain stability needs without requiring extensive sorting.

Part Context

This part belongs to the BD136/138/140 family of PNP transistors manufactured originally by Fairchild Semiconductor. The BD136 variant specifically offers a -45 V rating, distinguishing it from the higher-voltage BD138 (-60 V) and BD140 (-80 V) counterparts. These components are widely used in audio output stages and general-purpose power switching roles within consumer electronics.

Replacement Considerations

Direct substitutes include the BD136 from other manufacturers adhering to the same TO-126 footprint and electrical specifications. Complementary NPN replacements for the pair include the BD135 or BD139.

BD13610STUBD13610STU
$1.07
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