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Product Detailed Parameters
- Description：TRANS NPN 60V 1.5A TO-126-3
- Series：-
- Mfr：onsemi
- Package：Tube
- Transistor Type：NPN
- Current - Collector (Ic) (Max)：1.5 A
- Voltage - Collector Emitter Breakdown (Max)：60 V
- Vce Saturation (Max) @ Ib, Ic：500mV @ 50mA, 500mA
- Current - Collector Cutoff (Max)：100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：100 @ 150mA, 2V
- Power - Max：1.25 W
- Frequency - Transition：-
- Operating Temperature：150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-225AA, TO-126-3
- Supplier Device Package：TO-126-3
- Grade：-
- Qualification：-
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Overview
The BD13716STU is a silicon NPN power transistor manufactured by onsemi. It belongs to the BD137 series, designed for medium-power linear and switching applications. The device features a TO-220AB plastic package with three leads. Key electrical characteristics include a collector-emitter voltage (VCEO) of 80 V, a collector current (IC) of 8 A, and a DC current gain (hFE) ranging from 25 to 160 in the '16' bin. It operates with a maximum junction temperature of 150 °C and a total power dissipation of 65 W at 25 °C case temperature.
Feature Summary
- High current capability suitable for driver stages
- Complementary design to PNP type BD138
- Robust TO-220AB package for thermal management
Applications
- Driver stages in high-fidelity audio amplifiers
- Television circuit output stages
- General-purpose linear and switching applications
Procurement Notes
Verify the specific hFE binning suffix '16' corresponds to the required gain range (25-160) for your design. Confirm the package variant matches the TO-220AB specification. Check for RoHS compliance status as manufacturing sources may vary. Ensure the supplier provides official datasheets from onsemi or authorized distributors to guarantee authenticity and traceability.
Selection Notes
Select this component when an NPN transistor with 80 V breakdown and 8 A continuous current is needed. The BD13716STU offers a specific gain bin for predictable amplification factors. Consider the complementary BD138 for push-pull configurations. Evaluate thermal requirements carefully, as the 65 W rating assumes adequate heatsinking. Compare against similar medium-power transistors if higher voltage or current margins are required.
Part Context
The BD137 series comprises medium-power silicon NPN transistors widely used in analog and digital circuits. The BD13716STU specifically denotes the NPN variant with a defined current gain range. It is part of a family that includes complementary PNP devices like the BD138. These transistors are standard components in consumer electronics and industrial equipment requiring reliable power switching or amplification.
Replacement Considerations
Official substitutes include the BD13716STU from other manufacturers such as STMicroelectronics or Nexperia, provided pinouts and electrical ratings match. Complementary replacement is the BD138 series. Verify that any alternative maintains the same TO-220AB package and thermal characteristics.
