BD1376STU

Overview

The onsemi BD1376STU is an NPN silicon planar power transistor housed in a TO-126 package. It features a maximum collector current of 1.5 A and a collector-emitter voltage rating of 80 V. The device has a maximum power dissipation of 12.5 W and operates up to a junction temperature of 150°C. Minimum DC current gain (hFE) is specified at 25, with a collector-base voltage of 80 V and an emitter-base voltage of 5 V.

Feature Summary

• NPN polarity configuration for switching and amplification
• TO-126 through-hole mounting for thermal management
• High collector current capability of 1.5 A

Applications

• General-purpose power switching circuits
• Linear amplifier stages
• Driver applications requiring moderate power handling

Procurement Notes

Verify the specific suffix 'STU' against official datasheets to confirm pinout and packaging details. Ensure the component meets required thermal dissipation standards for the intended application. Cross-reference manufacturer documentation for absolute maximum ratings before integration.

Selection Notes

Select this component for applications requiring 80 V breakdown and 1.5 A continuous current. Consider the TO-126 package size for board space constraints. Evaluate thermal resistance requirements to ensure operation within the 150°C limit under load conditions.

Part Context

Part of the BD137 series of NPN power transistors. Designed for general-purpose use in consumer and industrial electronics. Offers reliable performance in medium-power applications where robustness and standard packaging are prioritized.

Replacement Considerations

Consult official substitution guides for compatible equivalents. Verify pin compatibility and electrical parameters match before replacing.