BD137G

$1.00

Description：TRANS NPN 60V 1.5A TO-126
Series：-

SKU:2c9c73b95c31 Category: Single Bipolar Transistors Brand: onsemi

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

Product Detailed Parameters

Description：TRANS NPN 60V 1.5A TO-126
Series：-
Mfr：onsemi
Package：Bulk
Transistor Type：NPN
Current - Collector (Ic) (Max)：1.5 A
Voltage - Collector Emitter Breakdown (Max)：60 V
Vce Saturation (Max) @ Ib, Ic：500mV @ 50mA, 500mA
Current - Collector Cutoff (Max)：100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce：40 @ 150mA, 2V
Power - Max：1.25 W
Frequency - Transition：-
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-225AA, TO-126-3
Supplier Device Package：TO-126
Grade：-
Qualification：-

Download product information

BD137G

Overview

The BD137G is a plastic medium-power silicon NPN transistor from onsemi, designed for audio amplifiers and drivers in complementary or quasi-complementary circuits. It features a collector-emitter voltage of 60 Vdc and a collector current rating of 1.5 Adc. The device operates within a junction temperature range of -55 to +150 °C and offers a total device dissipation of 12.5 W at a case temperature of 25 °C. It utilizes the TO-225 package (Case 77-09) with a thermal resistance of 10 °C/W from junction to case.

Feature Summary

High DC current gain suitable for signal amplification
Complementary pairing with BD138G PNP transistors
Lead-free, halogen-free, and RoHS compliant construction

Applications

Audio amplifier circuits
Driver stages utilizing complementary topologies
Quasi-complementary circuit designs

Procurement Notes

Verify component status before procurement as this device may be discontinued and not recommended for new designs. Confirm specific ordering suffixes match required packaging quantities and environmental compliance standards. Consult official onsemi channels for availability updates and alternative recommendations.

Selection Notes

Select the BD137G when a 60 V collector-emitter voltage rating is required alongside 1.5 A continuous current capability. Ensure thermal management accommodates the 12.5 W dissipation limit at 25 °C case temperature. Verify compatibility with complementary BD138G devices for balanced push-pull configurations.

Part Context

Part of the BD135/BD137/BD139 series of plastic medium-power silicon NPN transistors. Complements the BD136/BD138/BD140 PNP series. Manufactured by onsemi using epitaxial planar technology in a TO-225 plastic package.