BD13810STU

Overview

The BD13810STU is a PNP power transistor manufactured by onsemi, designed for high-current amplification and switching applications. It features a collector-emitter voltage rating of 80 V and a continuous collector current capability of 1.5 A. The device operates with a maximum power dissipation of 12.5 W when mounted on a heatsink, utilizing its TO-220AB through-hole package. Key electrical characteristics include a DC current gain (hFE) range of 10 to 40, ensuring predictable performance in linear and saturated modes. The component supports a junction temperature up to 150 °C and offers a transition frequency of 25 MHz, making it suitable for audio output stages and general-purpose driver circuits.

Feature Summary

• High current handling capability of 1.5 A for robust load driving
• Enhanced thermal performance via TO-220AB package for effective heat dissipation
• Controlled current gain binning (10-40) for consistent amplifier linearity

Applications

• Audio power amplifier output stages
• General-purpose high-current switching circuits
• Driver stages for relays or motors

Procurement Notes

Verify the manufacturer marking matches onsemi specifications and confirm the package type is TO-220AB. Ensure the hFE binning aligns with circuit requirements for linear operation. Check for authenticity markers to prevent counterfeit components. Confirm RoHS compliance status if required by your manufacturing standards. Validate datasheet revisions against your design documentation.

Selection Notes

Select this component when a PNP transistor with 1.5 A current capacity and 80 V breakdown voltage is required. The TO-220AB package is preferred for applications needing direct board mounting with heatsinking. Consider the hFE range of 10-40 for designs requiring stable gain without excessive variation. Compare thermal resistance values against your system's cooling capabilities to ensure safe operating junction temperatures under full load conditions.

Part Context

This part belongs to the BD13x series of complementary NPN/PNP power transistors. It serves as the PNP counterpart to devices like the BD135/BD137 family variants. The series is widely used in consumer electronics and industrial control systems where moderate power handling and reliable switching are necessary. It complements other discrete power devices in amplifier and regulator topologies.

Replacement Considerations

Direct substitutes include BD139, BD140, and MJE13009. Verify pinout compatibility and thermal characteristics before substitution. Ensure replacement parts meet the same 1.5 A and 80 V ratings.

FAQ

What is the maximum power dissipation of the BD13810STU?

The maximum power dissipation is 12.5 W at an ambient temperature of 25 °C when mounted on a heatsink.

Is the BD13810STU suitable for linear audio amplification?

Yes, its controlled hFE range and high current capability make it suitable for Class AB audio output stages.

What is the transition frequency of this transistor?

The transition frequency (fT) is 25 MHz, limiting its use in very high-frequency RF applications.