BD1386STU

$0.11

Description：TRANS PNP 60V 1.5A TO-126-3
Series：-

SKU:d6c674bb911b Category: Single Bipolar Transistors Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：TRANS PNP 60V 1.5A TO-126-3
Series：-
Mfr：onsemi
Package：Tube
Transistor Type：PNP
Current - Collector (Ic) (Max)：1.5 A
Voltage - Collector Emitter Breakdown (Max)：60 V
Vce Saturation (Max) @ Ib, Ic：500mV @ 50mA, 500mA
Current - Collector Cutoff (Max)：100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce：40 @ 150mA, 2V
Power - Max：1.25 W
Frequency - Transition：-
Operating Temperature：150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-225AA, TO-126-3
Supplier Device Package：TO-126-3
Grade：-
Qualification：-

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BD1386STU

Overview

The onsemi BD1386STU is a PNP epitaxial silicon power transistor housed in a TO-126 package. It supports a maximum collector current of 1.5 A and withstands a collector-emitter voltage (VCEO) of 60 V. The device features a collector-base voltage (VCBO) of 60 V and an emitter-base voltage (VEBO) of 5 V. Maximum power dissipation is rated at 12.5 W, with a minimum DC current gain (hFE) of 40. Operating temperatures reach up to 150°C.

Feature Summary

PNP polarity configuration for complementary circuit designs
Epitaxial silicon construction for robust performance
TO-126 through-hole mounting for thermal management

Applications

Linear amplifier circuits
Switching applications
Complementary pairs with NPN transistors

Procurement Notes

Verify the specific suffix '6' indicates the 60 V rating variant within the BD138 series. Confirm package type matches TO-126 requirements. Check RoHS compliance status via official manufacturer documentation before integration. Ensure sourcing channels provide genuine onsemi components to avoid counterfeit risks.

Selection Notes

Select this component when a PNP transistor with 60 V breakdown and 1.5 A continuous current capability is required. Compare against BD137 or BD139 counterparts if NPN polarity is needed instead. Consider thermal resistance limits for high-power linear operations. Validate hFE ranges against specific circuit gain requirements.

Part Context

Part of the BD135/136/137/138/139/140 family of medium power transistors. Designed for general-purpose linear and switching uses. Complements the BD135, BD137, and BD139 NPN variants respectively. Widely used in audio and motor control applications requiring matched PNP/NPN pairs.