BD138G

Overview

The BD138G is a silicon PNP power transistor from onsemi, housed in the TO-225AA (CASE 77-09) plastic package. It is designed for audio amplifiers and drivers, featuring high DC current gain and complementarity with the BD137 series. Key electrical ratings include a collector-emitter voltage of 60 Vdc, a collector current of 1.5 Adc, and a total device power dissipation of 1.25 W at 25°C ambient temperature. The component operates within a junction temperature range of -55 to +150 °C and complies with RoHS standards.

Feature Summary

• High DC current gain for effective signal amplification
• Complementary design suitable for quasi-complementary circuits
• Lead-free and halogen/BFR-free construction

Applications

• Audio amplifier circuits
• Driver stages
• Complementary output configurations

Procurement Notes

Verify the specific datasheet version and manufacturer documentation to confirm exact electrical characteristics and mechanical dimensions. Ensure compliance requirements match project specifications. Cross-reference part numbers with authorized distributors to validate authenticity and traceability before integration into designs.

Selection Notes

Select this component when a PNP transistor with 60 V collector-emitter voltage and 1.5 A continuous current capability is required. It serves as a complementary pair to NPN devices like the BD137. Consider the TO-225AA package for through-hole mounting and thermal management needs in medium-power applications.

Part Context

This transistor belongs to the BD13x series of medium-power silicon PNP transistors. It is engineered for use in audio and driver applications where high gain and reliability are essential. The series offers design flexibility through its complementary nature with corresponding NPN counterparts.

Replacement Considerations

BD136G: Lower voltage rating (45 V). BD140G: Higher voltage rating (80 V). BD137: Complementary NPN counterpart.