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The BD139G is a plastic medium-power silicon NPN transistor manufactured by onsemi. It features a collector-emitter voltage (VCEO) of 80 Vdc and a collector-base voltage (VCBO) of 100 Vdc. The device supports a maximum collector current (IC) of 1.5 Adc and total device dissipation of 12.5 W at case temperature of 25°C. Operating junction temperature ranges from -55 to +150 °C. DC current gain (hFE) varies between 25 and 250 depending on collector current conditions.
Verify component authenticity through official onsemi channels. Confirm RoHS compliance status and Pb-Free packaging details prior to procurement. Review datasheet revision history for updated electrical characteristics. Ensure thermal management aligns with specified derating curves. Validate package marking against official documentation.
Select this component for applications requiring an NPN silicon transistor with 80 V collector-emitter voltage rating. Consider the 1.5 A continuous collector current capability for load requirements. Evaluate thermal resistance parameters for heat sink design. Verify compatibility with complementary PNP devices for push-pull topologies.
This part belongs to the BD1xx series of plastic medium-power silicon NPN transistors. It is specifically designated as BD139G, indicating the lead-free package variant. The series includes complementary parts such as BD136, BD138, and BD140. These components are designed for general-purpose power switching and amplification tasks.
BD140 serves as the complementary PNP counterpart within the same series.