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The BD139-6-BP is an NPN silicon power transistor manufactured by Micro Commercial Components. It features a collector-emitter voltage of 80 Vdc and a continuous collector current of 1.5 Adc. The device provides a total device dissipation of 1.25 W at 25°C ambient temperature, with a thermal resistance junction-to-case of 10 °C/W. DC current gain (hFE) is classified as Rank 6, ranging from 40 to 100. It operates within a temperature range of -55 to +150 °C.
Verify the specific suffix '-BP' indicates bulk packaging containing 1Kpcs per box. Confirm RoHS compliance status directly with the manufacturer or authorized distributors. Ensure the source is an authorized MCC distributor to guarantee genuine parts and full traceability, as unauthorized sources do not provide warranty coverage.
Select this component when an NPN power transistor with 80V breakdown and 1.5A current capability is required. The Rank 6 hFE classification suits applications needing a gain range of 40 to 100. Consider the SOT-32 package dimensions and thermal management requirements for the 1.25W dissipation rating at ambient temperatures.
This part belongs to the BD135/BD137/BD139 series of NPN silicon power transistors. It serves as the complementary counterpart to the PNP BD140. The '6' suffix denotes the specific DC current gain ranking, distinguishing it from other gain classes like 10 or 16 within the same voltage and current specifications.
Compatible substitutes include BD139G from onsemi and BD139 from STMicroelectronics. Verify that replacement parts match the 80V VCEO, 1.5A IC, and SOT-32 package form factor. Check if alternative manufacturers offer equivalent hFE rankings for direct pin-compatible integration.
The DC current gain (hFE) is classified as Rank 6, with a minimum value of 40 and a maximum value of 100.
Standard parts are RoHS compliant. Halogen-free versions are available upon request by adding the '-HF' suffix to the part number.
The maximum thermal resistance from junction to case is 10 °C/W.