BD13916S

Overview

The onsemi BD13916S is an NPN silicon epitaxial planar transistor housed in a TO-126 (SOT-32) three-pin package. It features a maximum collector current of 1.5 A and a collector-emitter voltage rating of 80 V. The device supports a maximum power dissipation of 12.5 W and operates at junction temperatures up to 150°C. With a minimum DC current gain (hFE) of 25, it serves as a robust component for general-purpose amplification and switching applications.

Feature Summary

• Epitaxial planar construction designed for high reliability
• Suitable for complementary or quasi-complementary circuit topologies
• Pre-selected DC current gain for consistent performance

Applications

• Audio amplifier stages
• General-purpose driver circuits
• Linear regulation applications

Procurement Notes

Verify the specific suffix 'S' against official datasheets to confirm package dimensions and marking codes. Ensure the selected variant matches the required thermal resistance and pinout configuration for your PCB layout. Cross-reference with authorized distributors to confirm availability and authenticity.

Selection Notes

Select this component when an NPN transistor with 1.5 A continuous current capability and 80 V breakdown voltage is required. Consider the TO-126 package for through-hole mounting and adequate heat dissipation without additional heatsinking in low-duty cycles. Verify hFE binning requirements for your specific gain application.

Part Context

This part belongs to the BD139 series of medium-power NPN transistors. It is often paired with complementary PNP devices like the BD140 for push-pull output stages. The series is widely used in consumer electronics and industrial equipment requiring reliable linear amplification.

Replacement Considerations

Check for direct replacements within the same family, such as other BD139 variants with different gain bins. Verify that any substitute maintains the same TO-126 footprint and electrical ratings of 1.5 A and 80 V.