BD139G

$1.18

Description：TRANS NPN 80V 1.5A TO-126
Series：-

SKU:9260e0d4c4b4 Category: Single Bipolar Transistors Brand: onsemi

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

Product Detailed Parameters

Description：TRANS NPN 80V 1.5A TO-126
Series：-
Mfr：onsemi
Package：Bulk
Transistor Type：NPN
Current - Collector (Ic) (Max)：1.5 A
Voltage - Collector Emitter Breakdown (Max)：80 V
Vce Saturation (Max) @ Ib, Ic：500mV @ 50mA, 500mA
Current - Collector Cutoff (Max)：100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce：40 @ 150mA, 2V
Power - Max：12.5 W
Frequency - Transition：-
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-225AA, TO-126-3
Supplier Device Package：TO-126
Grade：-
Qualification：-

Download product information

BD139G

Overview

The BD139G is a plastic medium-power silicon NPN transistor manufactured by onsemi. It features a collector-emitter voltage of 80 Vdc and supports a maximum collector current of 1.5 Adc. The device provides a total power dissipation of 12.5 W at a case temperature of 25°C, with a thermal resistance junction-to-case of 10 °C/W. It operates within a junction temperature range of -55 to +150°C. The component utilizes a TO-225 package and offers a minimum DC current gain (hFE) of 40 at a collector current of 0.15 A.

Feature Summary

Designed for use in audio amplifiers and drivers utilizing complementary or quasi-complementary circuits
High DC current gain capability
Complementary pairing available with BD136, BD138, and BD140 PNP transistors

Applications

Audio amplifier circuits
Driver stages in complementary configurations
Quasi-complementary circuit designs

Procurement Notes

Verify the specific ordering suffix and package style against the latest manufacturer documentation before procurement. Confirm that the component meets RoHS compliance requirements if applicable to the design. Check for any discontinuation notices or recommended new design alternatives provided by onsemi. Ensure thermal management solutions align with the specified derating curves for the intended operating environment.

Selection Notes

Select this component when an NPN transistor with 80 V collector-emitter voltage and 1.5 A continuous current capacity is required. Consider the TO-225 package for through-hole mounting applications. Evaluate the thermal resistance characteristics to ensure adequate heat dissipation for the expected power load. Verify compatibility with complementary PNP devices if designing push-pull output stages.

Part Context

The BD139G belongs to the BD1xx series of plastic medium-power silicon NPN transistors from onsemi. This series includes variants with different voltage ratings, such as the BD135G (45 V) and BD137G (60 V). These transistors are engineered for general-purpose power switching and amplification tasks, specifically optimized for audio applications requiring high current gain and reliable performance in complementary topologies.