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The BD14010STU is a single PNP epitaxial silicon bipolar junction transistor manufactured by onsemi. It features a TO-126-3 through-hole package and supports a maximum collector current of 1.5 A with a VCEO rating of 80 V. The device offers a DC current gain (hFE) range from 40 to 250, a collector-emitter saturation voltage of 500 mV, and a power dissipation capacity of 12.5 W. It operates at temperatures up to +150°C.
Verify component authenticity through authorized onsemi distributors. Confirm RoHS compliance status via official datasheets. Check lifecycle status as the product may be subject to obsolescence. Ensure package integrity matches TO-126-3 specifications during receipt inspection.
Select this component when a PNP transistor with 80 V breakdown and 1.5 A current capacity is required. Consider the TO-126-3 package for through-hole assembly needs. Evaluate hFE requirements against circuit gain specifications. Compare thermal resistance values against system heat dissipation capabilities.
Part of the BD140 series, this transistor complements NPN variants like the BD139. Designed for general-purpose use, it fits within onsemi's broad portfolio of discrete semiconductors. The series emphasizes reliability in standard electronic applications across consumer and industrial sectors.
Consult official cross-reference lists for verified substitutes. Ensure replacement parts match electrical ratings including VCEO, IC, and package type. Verify pinout compatibility before substitution.