BD158STU

Overview

The BD158STU is a single NPN epitaxial silicon bipolar junction transistor (BJT) manufactured by onsemi. It is designed for general-purpose switching and amplification applications within the BD158 series. The device utilizes a TO-126-3 through-hole package, providing robust mechanical stability for industrial environments. Key electrical specifications include a maximum collector current of 0.5 A and a high collector-emitter voltage rating of 300 V. The component supports a maximum power dissipation of 1 W and operates at temperatures up to +150°C. Its DC current gain ranges from 40 to 250, ensuring reliable performance across various load conditions.

Feature Summary

• High voltage capability with a 300 V collector-emitter breakdown rating suitable for demanding power circuits.
• Robust thermal management design supporting continuous operation at elevated temperatures up to 150°C.
• Standardized TO-126-3 through-hole packaging facilitates easy integration into legacy and new PCB layouts.

Applications

• General-purpose high-voltage switching circuits
• Audio amplifier output stages
• Industrial control system interfaces

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official datasheet to ensure compatibility with required pin configurations and thermal characteristics. Confirm RoHS compliance status directly with the supplier documentation prior to procurement. Cross-reference the part number with authorized distribution channels to guarantee authenticity and traceability. Ensure that the selected variant matches the intended application's voltage and current requirements without exceeding absolute maximum ratings.

Selection Notes

Select this component when designing circuits requiring high voltage isolation combined with moderate current handling capabilities. The TO-126-3 package is appropriate for applications where board space allows for through-hole mounting and heat sinking is feasible. Evaluate the thermal resistance parameters relative to the expected ambient temperature and power dissipation levels. Consider the hFE range variations when designing bias networks to ensure stable operation across different units.

Part Context

The BD158STU belongs to the BD158 series of NPN transistors produced by onsemi. This series is engineered for general-purpose applications requiring reliable performance in both analog and digital switching roles. The product line emphasizes durability and consistent electrical characteristics, making it suitable for widespread use in consumer electronics, industrial equipment, and automotive subsystems where standard BJT performance is sufficient.

Replacement Considerations

Consult the official onsemi cross-reference guide for verified substitute part numbers. Direct replacements must match the NPN configuration, 300 V rating, 0.5 A current limit, and TO-126-3 package footprint. Verify pinout compatibility before integrating alternative components into existing designs.