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Product Detailed Parameters
- Description：TRANS NPN 350V 0.5A TO-126
- Series：-
- Mfr：onsemi
- Package：Bulk
- Transistor Type：NPN
- Current - Collector (Ic) (Max)：500 mA
- Voltage - Collector Emitter Breakdown (Max)：350 V
- Vce Saturation (Max) @ Ib, Ic：-
- Current - Collector Cutoff (Max)：100µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：30 @ 50mA, 10V
- Power - Max：20 W
- Frequency - Transition：-
- Operating Temperature：-65°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-225AA, TO-126-3
- Supplier Device Package：TO-126
- Grade：-
- Qualification：-
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Overview
The BD159G is an NPN silicon epitaxial planar transistor manufactured by onsemi, housed in a TO-225AB (TO-226) package. It is designed for general-purpose amplifier and switch applications with a maximum collector current of 1.5 A and a collector-emitter voltage rating of 80 V. The device features a power dissipation capability of 12.5 W at 25°C ambient temperature and operates within a junction temperature range of -55°C to +150°C.
Feature Summary
- NPN polarity configuration suitable for standard switching and amplification circuits
- High thermal stability with a maximum junction temperature of +150°C
- Robust mechanical construction in a through-hole TO-225AB package
Applications
- General-purpose linear amplifier stages
- Low-frequency switching applications
- Driver circuits for loads up to 1.5 A
Procurement Notes
Verify the specific suffix against official datasheets to confirm pinout compatibility and electrical tolerances. Ensure the procurement channel provides original manufacturer documentation to validate RoHS compliance and authenticity. Cross-reference the ordering part number with the latest product change notices to avoid obsolete or modified variants.
Selection Notes
Select this component when an NPN transistor with 1.5 A continuous collector current and 80 V breakdown voltage is required. Consider the TO-225AB package for through-hole mounting requirements. Evaluate thermal management needs as the 12.5 W dissipation rating assumes adequate heatsinking or board copper area for heat spreading.
Part Context
The BD159G belongs to the BD139 series of medium-power NPN transistors. This family is widely used in consumer electronics and industrial equipment for tasks requiring moderate current handling. The device complements PNP counterparts like the BD140 in push-pull output stages.
Replacement Considerations
Direct substitutes include the BD139 and BD139S from various manufacturers, provided they meet the 1.5 A and 80 V specifications. Verify that replacement parts maintain the same TO-225AB footprint and pinout arrangement.
