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The BD159STU is a PNP epitaxial silicon bipolar junction transistor manufactured by onsemi. It is housed in a TO-126-3 through-hole package designed for robust power handling. The device supports a maximum collector current of 0.5 A and withstands a collector-emitter voltage of 350 V. Key electrical specifications include a collector-base voltage of 350 V, an emitter-base voltage of 5 V, and a power dissipation rating of 20 W. The component operates within a temperature range of -65°C to +150°C.
Verify the specific datasheet revision and RoHS compliance status directly with onsemi or authorized distributors before procurement. Confirm that the TO-126-3 lead form factor matches your PCB footprint requirements. Ensure thermal design accounts for the 20 W dissipation limit under actual operating conditions. Check for any obsolescence notices or lifecycle changes associated with this part number.
Select this component when a PNP transistor with high voltage tolerance is required. The 350 V rating distinguishes it from lower-voltage alternatives like the BD140 series. Consider the 0.5 A current limit for load requirements. The TO-126 package offers better heat dissipation than smaller surface-mount options but requires through-hole mounting space.
This part belongs to the general-purpose BJT family from onsemi. It complements NPN variants such as the BD158STU within the same voltage and current class. The BD159STU provides a reliable solution for discrete power switching tasks where high voltage isolation is critical compared to standard low-voltage logic transistors.
Public confirmed substitute part numbers: BD159STU_NL.