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Product Detailed Parameters
- Description：TRANS NPN 45V 3A TO-126-3
- Series：-
- Mfr：onsemi
- Package：Tube
- Transistor Type：NPN
- Current - Collector (Ic) (Max)：3:00 AM
- Voltage - Collector Emitter Breakdown (Max)：45 V
- Vce Saturation (Max) @ Ib, Ic：800mV @ 100mA, 1A
- Current - Collector Cutoff (Max)：100µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：63 @ 150mA, 2V
- Power - Max：30 W
- Frequency - Transition：3MHz
- Operating Temperature：150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-225AA, TO-126-3
- Supplier Device Package：TO-126-3
- Grade：-
- Qualification：-
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Overview
The BD17510STU is a general-purpose NPN epitaxial silicon bipolar junction transistor manufactured by onsemi. It features a collector-emitter voltage rating of 45 V and a continuous collector current capacity of 3 A. The device operates with a transition frequency of 3 MHz and dissipates up to 30 W of power. It is housed in a TO-126-3 through-hole package, designed for robust performance in standard electronic circuits requiring medium-power switching or amplification.
Feature Summary
- NPN epitaxial silicon construction for reliable switching performance
- High current handling capability suitable for power applications
- Through-hole mounting configuration for board integration
Applications
- General-purpose switching circuits
- Amplifier stages in consumer electronics
- Power management systems
Procurement Notes
Verify the specific datasheet version and RoHS compliance status directly with onsemi or authorized distributors before procurement. Confirm that the TO-126-3 package dimensions match the target PCB footprint requirements. Ensure thermal management solutions are adequate for the 30 W power dissipation limit under actual operating conditions.
Selection Notes
Select this component when a 45 V NPN BJT with 3 A current capacity is required in a through-hole package. Consider the 3 MHz transition frequency for speed limitations in high-frequency designs. Evaluate thermal resistance characteristics against the expected ambient temperature and heat sinking capabilities of the final assembly.
Part Context
This part belongs to the general-purpose bipolar junction transistor category within onsemi's discrete semiconductor portfolio. It serves as a standard solution for medium-power applications where through-hole reliability is preferred over surface-mount alternatives. The device complements other NPN transistors in the manufacturer's lineup offering similar voltage and current ratings.
Replacement Considerations
Consult official cross-reference lists for direct substitutes. Verify pinout compatibility and electrical parameter equivalence for any alternative components.
