BD1756STU

$0.12

Description：TRANS NPN 45V 3A TO-126-3
Series：-

SKU:dc5b0631b7e1 Category: Single Bipolar Transistors Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：TRANS NPN 45V 3A TO-126-3
Series：-
Mfr：onsemi
Package：Tube
Transistor Type：NPN
Current - Collector (Ic) (Max)：3:00 AM
Voltage - Collector Emitter Breakdown (Max)：45 V
Vce Saturation (Max) @ Ib, Ic：800mV @ 100mA, 1A
Current - Collector Cutoff (Max)：100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce：40 @ 150mA, 2V
Power - Max：30 W
Frequency - Transition：3MHz
Operating Temperature：150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-225AA, TO-126-3
Supplier Device Package：TO-126-3
Grade：-
Qualification：-

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BD1756STU

Overview

The BD1756STU is a single NPN epitaxial silicon bipolar junction transistor (BJT) manufactured by onsemi. Designed for through-hole mounting, it utilizes the TO-126-3 package configuration. The device supports a maximum continuous collector current of 1.5 A and features a collector-emitter breakdown voltage (VCEO) of 45 V. It offers a collector-base voltage (VCBO) of 45 V and an emitter-base voltage (VEBO) of 5 V. Power dissipation reaches 12.5 W at 25°C ambient temperature, with a maximum operating junction temperature of +150°C. DC current gain ranges from a minimum of 40 to a maximum of 250.

Feature Summary

Single NPN epitaxial silicon construction
Through-hole TO-126-3 packaging
High power dissipation capability

Applications

General-purpose switching applications
Linear amplifier circuits
Power regulation modules

Procurement Notes

Verify component authenticity through authorized channels due to end-of-life status. Confirm datasheet revisions match design requirements. Check RoHS compliance documentation for environmental standards. Validate package dimensions against PCB footprint specifications. Ensure storage conditions prevent moisture damage prior to soldering.

Selection Notes

Select this component for designs requiring 45 V NPN switching or amplification in through-hole layouts. Compare thermal resistance values against heat sink capabilities. Evaluate current gain variations across temperature ranges. Consider alternative packages if surface-mount space is constrained. Verify saturation voltage limits for low-loss switching needs.

Part Context

Part of the BD175 series family, this transistor complements PNP counterparts like the BD177. It serves as a discrete solution for medium-power electronic systems. The TO-126-3 form factor provides robust mechanical stability for industrial environments. It represents a standard option for legacy circuit designs requiring reliable NPN performance.