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The BD1766STU is a PNP epitaxial planar silicon transistor manufactured by onsemi. It features a maximum collector current of 3 A and a collector-emitter voltage rating of 45 V. The device is housed in a TO-126-3 through-hole package, designed for power dissipation up to 12.5 W. It operates within a temperature range of -55°C to +150°C junction temperature. Key electrical parameters include a DC current gain (hFE) ranging from 40 to 250 and a collector-emitter saturation voltage of 500 mV at specified currents.
Verify the specific suffix 'STU' against the manufacturer's latest datasheet to confirm pinout and mechanical dimensions match your PCB footprint requirements. Ensure that the 45 V voltage rating aligns with the peak transient voltages present in your target circuit design to prevent breakdown during operation.
Select this component when a PNP configuration with 3 A continuous current capacity is required. Compare the 45 V breakdown voltage against system supply rails. Evaluate the hFE range of 40-250 for base drive calculations. Consider the TO-126 package size for thermal management constraints relative to alternative surface-mount options.
This part belongs to the BD176 series of general-purpose PNP transistors. It complements NPN counterparts like the BD175 series within the same product family. The series targets cost-effective solutions for medium-power applications requiring reliable switching and linear amplification capabilities in standard industrial electronics.
Direct substitutes include BD17610STU and BD17516STU variants within the same manufacturer portfolio. Verify pin compatibility and exact current/voltage ratings before substitution. Cross-reference with generic equivalents only if electrical specifications and thermal characteristics are fully matched.