BD179

BD179

$0.24
  • Description:TRANS NPN 80V 3A TO-126
  • Series:-

SKU:66fabb89cbbb Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS NPN 80V 3A TO-126
  • Series:-
  • Mfr:onsemi
  • Package:Bulk
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):3:00 AM
  • Voltage - Collector Emitter Breakdown (Max):80 V
  • Vce Saturation (Max) @ Ib, Ic:800mV @ 100mA, 1A
  • Current - Collector Cutoff (Max):100µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:63 @ 150mA, 2V
  • Power - Max:30 W
  • Frequency - Transition:3MHz
  • Operating Temperature:-65°C ~ 150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-225AA, TO-126-3
  • Supplier Device Package:TO-126
  • Grade:-
  • Qualification:-

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BD179

Overview

The BD179 is a plastic medium-power silicon NPN transistor manufactured by onsemi. It features an 80 Vdc collector-emitter voltage rating and supports up to 3.0 Adc continuous collector current. The device provides a maximum total power dissipation of 30 W at 25°C case temperature, with a thermal resistance junction-to-case of 4.16°C/W. It operates within a junction temperature range of –65 to +150°C and utilizes the TO-225 package.

Feature Summary

  • Designed for high DC current gain applications
  • Complementary pairing available with the BD180 PNP transistor
  • Constructed using silicon epitaxial planar technology

Applications

  • Audio amplifiers utilizing complementary circuits
  • Audio amplifiers utilizing quasi-complementary circuits
  • Medium power linear switching applications

Procurement Notes

Verify that the ordering suffix includes 'G' to confirm the component is Pb-Free and RoHS compliant. Confirm the package type matches the required TO-225 form factor. Ensure the application design accounts for the specified thermal resistance and derating requirements above 25°C to maintain safe operating limits.

Selection Notes

Select this component when designing medium-power audio stages requiring an NPN silicon transistor. It serves as the direct complementary match to the BD180 for push-pull configurations. Consider its 30 W power handling capability and 80 V breakdown voltage when sizing the circuit for specific load conditions.

Part Context

This part belongs to the family of plastic medium-power silicon transistors produced by onsemi. It is specifically engineered for use in audio amplifier driver stages. The device complements the BD180 PNP transistor to facilitate balanced circuit designs.

Replacement Considerations

The BD180 is the designated complementary PNP replacement or pair for this NPN device.

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