BD233STU

Overview

The BD233STU is an NPN epitaxial silicon power transistor manufactured by Fairchild Semiconductor. It is housed in a TO-220AB package and designed for medium-power linear and switching applications. The device features a collector-emitter voltage rating of 45 V and a continuous collector current capacity of 2 A. It operates with a maximum junction temperature of 150 °C and includes a minimum DC current gain (hFE) of 15.

Feature Summary

• NPN epitaxial silicon construction for reliable power handling
• Integrated thermal stability suitable for linear and switching modes
• Complementary design pairing with the BD243 series

Applications

• General-purpose medium power linear circuits
• Power switching applications requiring 45V tolerance
• Complementary output stages paired with BD243 transistors

Procurement Notes

Verify the specific suffix against the manufacturer's official documentation to confirm pinout compatibility and exact electrical tolerances. Ensure the component matches the required TO-220AB physical dimensions and lead configuration for your PCB layout. Cross-reference the datasheet revision date to guarantee alignment with current manufacturing standards and material specifications.

Selection Notes

Select this component when a robust NPN power transistor is needed for moderate current levels up to 2 A. It serves as the complementary counterpart to the PNP BD243, facilitating push-pull amplifier designs. Consider its 45 V breakdown voltage and 150 °C thermal limit when designing for environments with significant heat dissipation requirements.

Part Context

This part belongs to the BD23x family of medium-power bipolar junction transistors. These devices are engineered for versatility in both linear regulation and high-speed switching tasks. The TO-220AB package provides efficient heat transfer capabilities, making it a standard choice for industrial and consumer electronics power management modules.

Replacement Considerations

Public confirmed substitute: BD233-BP.