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Product Detailed Parameters
- Description：TRANS NPN 80V 2A SOT-32-3
- Series：-
- Mfr：STMicroelectronics
- Package：Tube
- Transistor Type：NPN
- Current - Collector (Ic) (Max)：2:00 AM
- Voltage - Collector Emitter Breakdown (Max)：80 V
- Vce Saturation (Max) @ Ib, Ic：600mV @ 100mA, 1A
- Current - Collector Cutoff (Max)：100µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：25 @ 1A, 2V
- Power - Max：25 W
- Frequency - Transition：-
- Operating Temperature：150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-225AA, TO-126-3
- Supplier Device Package：SOT-32-3
- Grade：-
- Qualification：-
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Overview
The BD237 is a silicon epitaxial-base NPN power transistor manufactured using Planar technology with a Base Island layout. It is housed in a SOT-32 (TO-126) plastic package and intended for medium power linear and switching applications. Key electrical parameters include a collector-emitter voltage of 80 V, a continuous collector current of 2 A, and a total dissipation of 25 W at 25°C case temperature. The device exhibits exceptional high gain performance coupled with very low saturation voltage.
Feature Summary
- Manufactured in Planar technology with Base Island layout
- Exceptional high gain performance
- Very low saturation voltage
Applications
- Audio applications
- Power linear applications
- Switching applications
Procurement Notes
Verify the specific part number BD237 against official STMicroelectronics documentation to confirm availability and exact specifications. Ensure that the selected component meets all required absolute maximum ratings and electrical characteristics for the intended application environment. Cross-reference datasheet revisions to ensure compatibility with design requirements.
Selection Notes
Select the BD237 when a high-gain NPN power transistor with low saturation voltage is required for medium power applications. Consider its 2 A collector current capability and 80 V collector-emitter voltage rating. Evaluate thermal management needs based on the 25 W total dissipation specification at a 25°C case temperature.
Part Context
The BD237 belongs to a family of complementary silicon power transistors from STMicroelectronics. Its PNP complement is the BD238. These devices are designed for robust performance in various electronic circuits requiring reliable power handling and efficient signal amplification or switching capabilities.
Replacement Considerations
Consult official manufacturer documentation for verified substitute part numbers. Do not assume cross-compatibility without verifying pinout, electrical ratings, and package dimensions against the original BD237 specifications.
