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The BD237G is an NPN plastic medium power bipolar transistor designed for use in 5.0 to 10 W audio amplifiers and drivers utilizing complementary or quasi-complementary circuits. It features a collector-emitter voltage of 80 Vdc, a continuous collector current of 2.0 Adc, and total device dissipation of 25 W at 25°C case temperature. The DC current gain is specified as a minimum of 40 at IC = 0.15 Adc and 25 at IC = 1.0 Adc. The component operates within a junction temperature range of -55 to +150°C.
Verify the current availability status before procurement, as the BD237G is listed as discontinued on official documentation. Confirm that alternative components are suitable for new designs. Ensure compliance with specific environmental requirements regarding lead-free materials if applicable to the target application.
Select this component for medium power applications requiring an NPN transistor with an 80 V collector-emitter voltage rating. Consider the thermal resistance characteristics when designing heat dissipation solutions. Verify compatibility with complementary PNP devices like the BD234G for push-pull amplifier topologies.
The BD237G belongs to the BD23x series of plastic medium power bipolar transistors manufactured by onsemi. This series includes complementary PNP variants such as the BD234G and BD238G. These transistors are engineered specifically for audio frequency amplification and driver applications where moderate power handling and reliable switching are required.
The datasheet explicitly states these devices are not recommended for new design. Consult onsemi representatives for updated information or approved substitute part numbers suitable for modern implementations.