BD238

BD238

$0.26
  • Description:TRANS PNP 80V 2A SOT-32-3
  • Series:-

SKU:80f570d61f32 Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS PNP 80V 2A SOT-32-3
  • Series:-
  • Mfr:STMicroelectronics
  • Package:Tube
  • Transistor Type:PNP
  • Current - Collector (Ic) (Max):2:00 AM
  • Voltage - Collector Emitter Breakdown (Max):80 V
  • Vce Saturation (Max) @ Ib, Ic:600mV @ 100mA, 1A
  • Current - Collector Cutoff (Max):100µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:25 @ 1A, 2V
  • Power - Max:25 W
  • Frequency - Transition:-
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-225AA, TO-126-3
  • Supplier Device Package:SOT-32-3
  • Grade:-
  • Qualification:-

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BD238

Overview

The BD238 is a low voltage PNP power transistor manufactured using planar technology with a Base Island layout. It provides exceptional high gain performance coupled with very low saturation voltage, making it suitable for linear and switching applications. The device features a collector current of -2 A and peak current of -6 A. Absolute maximum ratings include a collector-base voltage of -100 V and total dissipation of 25 W at 25 °C case temperature. Electrical characteristics specify a DC current gain (hFE) ranging from 25 to 40 at IC = -1 A.

Feature Summary

  • Low saturation voltage design
  • High gain performance
  • Planar technology with Base Island layout

Applications

  • Audio applications
  • Power linear applications
  • Switching applications

Procurement Notes

Verify the obsolete status of this component before procurement planning. Confirm availability through authorized distributors or secondary markets as standard supply channels may not stock this part. Ensure compatibility with existing designs requiring replacement components by checking pinout and electrical specifications against original requirements.

Selection Notes

Select the BD238 for circuits requiring a PNP power transistor with high gain and low saturation voltage. Consider its -2 A continuous collector current and -100 V breakdown voltage limits when designing power stages. Evaluate thermal management needs given the 25 W dissipation rating in the SOT-32 package.

Part Context

The BD238 belongs to a family of complementary silicon power transistors produced by STMicroelectronics. Its NPN counterpart is the BD237. These devices are designed for medium power applications where efficiency and gain are critical factors in circuit performance.

Replacement Considerations

Check for direct replacements among other manufacturers offering complementary silicon power transistors with similar -2 A current and -100 V voltage ratings. Verify package compatibility with the SOT-32 form factor.

FAQ

What is the maximum collector-emitter voltage?

The maximum collector-emitter voltage (VCEO) is -80 V.

What is the typical DC current gain?

The typical DC current gain (hFE) is 25 at a collector current of -1 A.

What is the maximum operating junction temperature?

The maximum operating junction temperature is 150 °C.

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