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The BD238 is a low voltage PNP power transistor manufactured using planar technology with a Base Island layout. It provides exceptional high gain performance coupled with very low saturation voltage, making it suitable for linear and switching applications. The device features a collector current of -2 A and peak current of -6 A. Absolute maximum ratings include a collector-base voltage of -100 V and total dissipation of 25 W at 25 °C case temperature. Electrical characteristics specify a DC current gain (hFE) ranging from 25 to 40 at IC = -1 A.
Verify the obsolete status of this component before procurement planning. Confirm availability through authorized distributors or secondary markets as standard supply channels may not stock this part. Ensure compatibility with existing designs requiring replacement components by checking pinout and electrical specifications against original requirements.
Select the BD238 for circuits requiring a PNP power transistor with high gain and low saturation voltage. Consider its -2 A continuous collector current and -100 V breakdown voltage limits when designing power stages. Evaluate thermal management needs given the 25 W dissipation rating in the SOT-32 package.
The BD238 belongs to a family of complementary silicon power transistors produced by STMicroelectronics. Its NPN counterpart is the BD237. These devices are designed for medium power applications where efficiency and gain are critical factors in circuit performance.
Check for direct replacements among other manufacturers offering complementary silicon power transistors with similar -2 A current and -100 V voltage ratings. Verify package compatibility with the SOT-32 form factor.
The maximum collector-emitter voltage (VCEO) is -80 V.
The typical DC current gain (hFE) is 25 at a collector current of -1 A.
The maximum operating junction temperature is 150 °C.